Datasheet > MBR20030CT

MBR20030CT

更新时间： 2024-11-01 04:16:43

品牌	Logo	应用领域
TRSYS		肖特基二极管局域网
页数	文件大小	规格书
2页	134K
描述
SCHOTTKY DIODES MODULE TYPE 200A

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中文翻译

获取价格

数据手册

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MBR20030CT 数据手册

Transys

MBR20020CT(A)

THRU

MBR200100CT(A)

Electronics

I M I T E D

SCHOTTKY DIODES MODULE TYPE 200A

Features

High Surge Capability

Types Up to 100V V

200Amp Rectifier

20-100 Volts

RRM

TWIN TOWER

Maximum Ratings

Operating Temperature: -40 C to

+175

Storage Temperature: -40 C to

Maximum

Maximum DC

Blocking

Part Number

Recurrent

Maximum

Peak Reverse RMS Voltage

Voltage

MBR20020CT(R)

MBR20030CT(R)

MBR20035CT(R)

MBR20040CT(R)

MBR20045CT(R)

MBR20060CT(R)

MBR20080CT(R)

MBR200100CT(R)

14V

20V

21V

25V

28V

32V

42V

56V

30V

35V

40V

45V

60V

80V

30V

35V

40V

45V

60V

80V

LUG

Teminal

Anode 1

LUG

Teminal

Cathode 1 Cathode 2

LUG

Teminal

Anode 2

Teminal

100V

70V

100V

Baseplate

Common Cathode

Baseplate

Electrical Characteristics @ 25 Unless Otherwise Specified

R=Common Anode

Average Forward

I^F(AV)

200A

T_C=136

DIMENSIONS

(Per pkg)

Current

Peak Forward Surge

INCH

IFSM

1500A

8.3ms

sine

half

(Per leg)

Current

DIM

MIN

MAX

3.360

0.800

0.650

0.130

0.510

MIN

-----

MAX

92.20

20.32

16.51

3.30

12.95

NOTE

(MBR20020CT~MBR20045CT)

(MBR20060CT)

0.65V

0.75V

0.84V

-----

Maximum

(Per leg)

0.700

-----

17.78

-----

Instantaneous

V_F

NOTE (1)

(MBR20080CT~MBR200100CT)

=100A;

T = 25

Forward Voltage

0.120

3.05

12.45

NOTE (1)

Maximum

0.490

1.379

-----

Instantaneous

5.0

BSC

-----

35.02 BSC

A T_J= 25

125

I_R

Reverse Current At

Rated DC Blocking

-----

FULL

7.37

200

T_J=

1/4

0.275

3.150

0.600

0.312

0.180

- 20

UNC

6.99

Voltage

(Per leg)

0.290

2 PL

Maximum Thermal

Resistance Junction

BSC

80.01 BSC

R j c

0.8

-----

15.24

7.92

4.57

9.40

4.95

0.370

0.195

(Per leg)

To Case

NOTE :

(1)

usec,

Pulse Test: Pulse Width 300

Duty Cycle

中文翻译

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