Datasheet > MBR20030CT

MBR20030CT

更新时间： 2024-09-14 12:00:11

品牌	Logo	应用领域
NAINA		肖特基二极管局域网
页数	文件大小	规格书
2页	135K
描述
Silicon Schottky Diode, 200A

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中文翻译

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数据手册

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MBR20030CT 数据手册

MBR20020CT thru

MBR20040CTR

Naina Semiconductor Ltd.

Silicon Schottky Diode, 200A

Features

•

Guard Ring Protection

Low forward voltage drop

High surge current capability

Up to 100V V_RRM

TWIN TOWER PACKAGE

Maximum Ratings (T_J= 25^oC unless otherwise specified)

MBR20020CT MBR20030CT MBR20035CT MBR20040CT

Parameter

Symbol

Conditions

Units

(R)

Repetitive peak

reverse voltage

V_RRM

RMS reverse voltage

DC blocking voltage

V_RMS

V_DC

Average forward

current

I_F(AV)

T_C≤ 135 ^oC

200

Non-repetitive

forward surge

current, half sine-

wave

T_C= 25 ^oC

t_p= 8.3 ms

I_FSM

1500

Electrical Characteristics (T_J= 25^oC unless otherwise specified)

MBR20020CT MBR20030CT MBR20035CT MBR20040CT

Parameter

Symbol

Conditions

Units

(R)

I_F= 100 A

T_J= 25 ^oC

DC forward voltage

V_F

0.68

V_R= 20 V

T_J= 25 ^oC

DC reverse current

I_R

V_R= 20 V

T_J= 125^oC

200

Thermal Characteristics (T_J= 25^oC unless otherwise specified)

MBR20020CT MBR20030CT MBR20035CT MBR20040CT

Parameter

Symbol

Units

^oC/W

^oC

(R)

Thermal resistance

junction to case

R_thJ-C

0.5

Operating, storage

temperature range

- 40 to +175

T_J, T_stg

D-95, Sector 63, Noida – 201301, India

•

Tel: 0120-4205450

•

Fax: 0120-4273653

sales@nainasemi.com

•

www.nainasemi.com

中文翻译

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