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MBR200200CT PDF预览

MBR200200CT

更新时间: 2024-09-15 01:05:23
品牌 Logo 应用领域
GENESIC 局域网二极管
页数 文件大小 规格书
3页 716K
描述
Silicon Power Schottky Diode

MBR200200CT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PUFM-X2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.54
应用:POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.92 V
JESD-30 代码:R-PUFM-X2最大非重复峰值正向电流:1500 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:100 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:200 V最大反向电流:3000 µA
表面贴装:NO技术:SCHOTTKY
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBR200200CT 数据手册

 浏览型号MBR200200CT的Datasheet PDF文件第2页浏览型号MBR200200CT的Datasheet PDF文件第3页 
MBR200150CT thru MBR200200CTR  
VRRM = 150 V - 200 V  
IF(AV) = 200 A  
Silicon Power  
Schottky Diode  
Features  
• High Surge Capability  
• Types from 150 V to 200 V VRRM  
Twin Tower Package  
• Not ESD Sensitive  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
MBR200200CT(R)  
Parameter  
Symbol  
MBR200150CT(R)  
Unit  
Repetitive peak reverse  
voltage  
VRRM  
200  
150  
V
VRMS  
VDC  
Tj  
141  
RMS reverse voltage  
DC blocking voltage  
Operating temperature  
Storage temperature  
106  
V
V
200  
150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
TC = 125 °C  
MBR200200CT(R)  
Parameter  
Symbol  
IF(AV)  
MBR200150CT(R)  
Unit  
A
Average forward current  
(per pkg)  
200  
200  
Peak forward surge  
current (per leg)  
IFSM  
tp = 8.3 ms, half sine  
1500  
1500  
A
Maximum forward voltage  
(per leg)  
VF  
IR  
IFM = 100 A, Tj = 25 °C  
0.92  
V
0.88  
Tj = 25 °C  
Tj = 100 °C  
Tj = 150 °C  
3
3
Reverse current at rated  
DC blocking voltage (per  
leg)  
10  
50  
mA  
10  
50  
Thermal characteristics  
Thermal resistance,  
junction-case (per leg)  
RΘJC  
0.45  
0.45  
°C/W  
1
Oct. 2018  
http://www.diodemodule.com/silicon_products/modules/mbr200150ct.pdf  

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