Datasheet > MBR200100CT

MBR200100CT

更新时间： 2024-09-13 22:46:23

品牌	Logo	应用领域
美微科 - MCC		二极管局域网
页数	文件大小	规格书
3页	412K
描述
200 Amp Rectifier 20 to 100 Volts Schottky Barrier

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MBR200100CT 数据手册

MBR20020CT

M C C

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21201 Itasca Street Chatsworth

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THRU

MBR200100CT

200 Amp

Schottky Barrier

Rectifier

Features

Metal of siliconrectifier, majonty carrier conducton

Guard ring for transient protection

Low power loss high efficiency

20 to 100 Volts

High surge capacity, High current capability

Maximum Ratings

FULL PACK

•

Operating Temperature: -55°C to +175°C

Storage Temperature: -55°C to +175°C

Maximum

Recurrent

Maximum DC

Blocking

MCC

Maximum

Part Number Peak Reverse RMS Voltage

Voltage

MBR20020CT

MBR20030CT

MBR20035CT

MBR20040CT

MBR20045CT

MBR20060CT

MBR20080CT

MBR200100CT

20V

30V

35V

40V

45V

60V

80V

100V

14V

21V

24.5V

28V

31.5V

42V

56V

20V

30V

35V

40V

45V

60V

80V

100V

70V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

Peak Forward Surge

Current

I_F(AV)

200 A

T_C= 136°C

DIMENSIONS

I_FSM

1500A 8.3ms, half sine

INCH

MIN

DIM

MAX

NOM

1.585

.800

2.500

.132

MIN

MAX

NOTE

3.150

1.565

.700

2.400

.119

80.01

39.75

17.78

60.96

3.02

NOM

40.26

20.32

63.50

3.35

Maximum

Instantaneous

Forward Voltage

20020-20045CT

20060CT

20080-200100CT

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

_FM= 100 A;

T_J= 25°C

1.375 REF

34.92 REF

V_F

.68 V

.75 V

.84 V

3.550

.580

3.650

90.17

92.71

15.75

.620

1/4 -20 UNF

.410

14.73

FULL

.380

.185

.275

9.65

4.70

6.99

10.41

4.95

7.49

.195

.295

I_R

5 mA

75 mA

T_J= 25°C

T_J= 125°C

Typical Junction

Capacitance

C_J

4600pF Measured at

1.0MHz, V_R=5.0V

*Pulse Test: Pulse Width 300µsec, Duty Cycle 2%

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