Datasheet > MBR200150CT_18

MBR200150CT_18

更新时间： 2024-11-02 01:05:23

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	716K
描述
Silicon Power Schottky Diode

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中文翻译

获取价格

数据手册

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MBR200150CT_18 数据手册

MBR200150CT thru MBR200200CTR

V_RRM= 150 V - 200 V

I_F(AV)= 200 A

Silicon Power

Schottky Diode

Features

• High Surge Capability

• Types from 150 V to 200 V V_RRM

Twin Tower Package

• Not ESD Sensitive

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

MBR200200CT(R)

Parameter

Symbol

MBR200150CT(R)

Unit

Repetitive peak reverse

voltage

V_RRM

200

150

V_RMS

V_DC

T_j

141

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

106

200

150

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

T_C= 125 °C

MBR200200CT(R)

Parameter

Symbol

I_F(AV)

MBR200150CT(R)

Unit

Average forward current

(per pkg)

200

Peak forward surge

current (per leg)

I_FSM

t_p= 8.3 ms, half sine

1500

Maximum forward voltage

(per leg)

V_F

I_R

I_FM= 100 A, T_j= 25 °C

0.92

0.88

T_j= 25 °C

T_j= 100 °C

T_j= 150 °C

Reverse current at rated

DC blocking voltage (per

leg)

Thermal characteristics

Thermal resistance,

junction-case (per leg)

R_ΘJC

0.45

°C/W

Oct. 2018

http://www.diodemodule.com/silicon_products/modules/mbr200150ct.pdf

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