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MBR200150CT_18 PDF预览

MBR200150CT_18

更新时间: 2024-11-02 01:05:23
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GENESIC /
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3页 716K
描述
Silicon Power Schottky Diode

MBR200150CT_18 数据手册

 浏览型号MBR200150CT_18的Datasheet PDF文件第2页浏览型号MBR200150CT_18的Datasheet PDF文件第3页 
MBR200150CT thru MBR200200CTR  
VRRM = 150 V - 200 V  
IF(AV) = 200 A  
Silicon Power  
Schottky Diode  
Features  
• High Surge Capability  
• Types from 150 V to 200 V VRRM  
Twin Tower Package  
• Not ESD Sensitive  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
MBR200200CT(R)  
Parameter  
Symbol  
MBR200150CT(R)  
Unit  
Repetitive peak reverse  
voltage  
VRRM  
200  
150  
V
VRMS  
VDC  
Tj  
141  
RMS reverse voltage  
DC blocking voltage  
Operating temperature  
Storage temperature  
106  
V
V
200  
150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
TC = 125 °C  
MBR200200CT(R)  
Parameter  
Symbol  
IF(AV)  
MBR200150CT(R)  
Unit  
A
Average forward current  
(per pkg)  
200  
200  
Peak forward surge  
current (per leg)  
IFSM  
tp = 8.3 ms, half sine  
1500  
1500  
A
Maximum forward voltage  
(per leg)  
VF  
IR  
IFM = 100 A, Tj = 25 °C  
0.92  
V
0.88  
Tj = 25 °C  
Tj = 100 °C  
Tj = 150 °C  
3
3
Reverse current at rated  
DC blocking voltage (per  
leg)  
10  
50  
mA  
10  
50  
Thermal characteristics  
Thermal resistance,  
junction-case (per leg)  
RΘJC  
0.45  
0.45  
°C/W  
1
Oct. 2018  
http://www.diodemodule.com/silicon_products/modules/mbr200150ct.pdf  

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