Datasheet > MBR10H15_15

MBR10H15_15

更新时间： 2024-11-21 01:26:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	95K
描述
Dual Common Cathode High Voltage Schottky Rectifier

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MBR10H15_15 数据手册

MBR10H150CT, MBRF10H150CT, SB10H150CT-1

www.vishay.com

Vishay General Semiconductor

Dual Common Cathode High Voltage Schottky Rectifier

Low Leakage Current 5.0 μA

FEATURES

TO-220AB

ITO-220AB

• Power pack

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Solder dip 275 °C max.10 s, per JESD 22-B106

MBRF10H150CT

MBR10H150CT

TO-262AA

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency inverters, freewheeling, and

polarity protection application.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-262AA

SB10H150CT-1

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

PIN 1

PIN 3

PIN 2

CASE

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 5 A

Polarity: As marked

V_RRM

150 V

Mounting Torque: 10 in-lbs maximum

I_FSM

160 A

0.72 V



V_F

T_Jmax.

Package

Diode variations

175 °C

TO-220AB, ITO-220AB, TO-262AA

Common cathode

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

VALUE

150

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

V_RWM

V_DC

Maximum DC blocking voltage

total device

Maximum average forward rectified current (fig.1)

per diode

I_F(AV)

I_FSM

Peak forward surge current 8.3 ms single half sine-wave superimposed on

rated load per diode

160

Peak repetitive reverse current per diode at t_p= 2 μs, 1 kHz

Peak non-repetitive reverse surge energy per diode (8/20 waveform)

Non-repetitve avalanche energy per diode at 25 °C, I_AS= 1.5 A, L = 10 mH

Voltage rate of change (rated V_R)

I_RRM

E_RSM

E_AS

1.0

V/μs

°C

11.25

dV/dt

T_J, T_STG

V_AC

10 000

-65 to +175

1500

Operating junction and storage temperature range

Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min

Revision: 11-Dec-14

Document Number: 88779

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与MBR10H15_15相关器件

型号	品牌	获取价格	描述	数据表
MBR10H150C	RECTRON	获取价格	SCHOTTKY BARRIER RECTIFIER
MBR10H150CA-C	RECTRON	获取价格	Rectifier Diode,
MBR10H150CT	VISHAY	获取价格	Dual High-Voltage Schottky Rectifiers
MBR10H150CT	KERSEMI	获取价格	Plastic package has Underwriters Laboratory Flammability Classification 94V-0
MBR10H150CT	LGE	获取价格	10.0AMP. Schottky Barrier Rectifiers
MBR10H150CT	TSC	获取价格	10.0 AMPS. Schottky Barrier Rectifiers
MBR10H150CT	PANJIT	获取价格	ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
MBR10H150CT_07	VISHAY	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
MBR10H150CT_08	VISHAY	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
MBR10H150CT_T0_00001	PANJIT	获取价格	ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS

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