5秒后页面跳转
MBR10H150CT_07 PDF预览

MBR10H150CT_07

更新时间: 2024-02-17 02:42:51
品牌 Logo 应用领域
威世 - VISHAY 高压
页数 文件大小 规格书
5页 126K
描述
Dual Common-Cathode High-Voltage Schottky Rectifier

MBR10H150CT_07 数据手册

 浏览型号MBR10H150CT_07的Datasheet PDF文件第2页浏览型号MBR10H150CT_07的Datasheet PDF文件第3页浏览型号MBR10H150CT_07的Datasheet PDF文件第4页浏览型号MBR10H150CT_07的Datasheet PDF文件第5页 
MBR10H150CT, MBRF10H150CT & SB10H150CT-1  
Vishay General Semiconductor  
Dual Common-Cathode High-Voltage Schottky Rectifier  
Low Leakage Current 5.0 µA  
FEATURES  
TO-220AB  
ITO-220AB  
• Guardring for overvoltage protection  
• Low power loss, high efficiency  
• Low forward voltage drop  
• High frequency operation  
3
3
• Solder dip 260 °C, 40 seconds  
2
2
1
1
MBRF10H150CT  
TO-262AA  
MBR10H150CT  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in high frequency inverters, free-wheeling and  
polarity protection applications.  
3
2
1
SB10H150CT-1  
MECHANICAL DATA  
PIN 1  
PIN 3  
PIN 2  
CASE  
Case: TO-220AB, ITO-220AB, TO-262AA  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
VF  
2 x 5 A  
150 V  
160 A  
0.72 V  
175 °C  
E3 suffix for commercial grade  
Mounting Torque: 10 in-lbs maximum  
Polarity: As marked  
Tj  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
VRRM  
MBR10H150CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
150  
150  
150  
V
V
V
VRWM  
VDC  
Total device  
Maximum average forward rectified current (see Fig. 1)  
per diode  
10  
5
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on  
rated load per diode  
IFSM  
160  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)  
Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH  
Voltage rate of change (rated VR)  
IRRM  
ERSM  
EAS  
1.0  
10  
A
mJ  
mJ  
V/µs  
°C  
11.25  
dv/dt  
10000  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
Isolation voltage (ITO-220AB only)  
From terminals to heatsink t = 1 minute  
VAC  
1500  
V
Document Number: 88779  
Revision: 27-Jul-07  
www.vishay.com  
1

与MBR10H150CT_07相关器件

型号 品牌 获取价格 描述 数据表
MBR10H150CT_08 VISHAY

获取价格

Dual Common-Cathode High-Voltage Schottky Rectifier
MBR10H150CT_T0_00001 PANJIT

获取价格

ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
MBR10H150CTE3 VISHAY

获取价格

DIODE 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3, Rectif
MBR10H150CT-E3 VISHAY

获取价格

DIODE 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3, Rectif
MBR10H150CT-E3/45 VISHAY

获取价格

Dual Common-Cathode High-Voltage Schottky Rectifier
MBR10H150CT-E3/45 KERSEMI

获取价格

Dual Common-Cathode High-Voltage Schottky Rectifier
MBR10H150DC PANJIT

获取价格

ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
MBR10H150DC_R2_00001 PANJIT

获取价格

ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
MBR10H150FCT PANJIT

获取价格

ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
MBR10H150FCT_T0_00001 PANJIT

获取价格

ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS