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MBR10H35-E3 PDF预览

MBR10H35-E3

更新时间： 2024-11-19 03:46:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
3页 72K
描述
DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC PACKAGE-2, Rectifier Diode

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MBR10H35-E3 数据手册

 浏览型号MBR10H35-E3的Datasheet PDF文件第2页浏览型号MBR10H35-E3的Datasheet PDF文件第3页 
MBR10Hxx, MBRF10Hxx & MBRB10Hxx Series  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Schottky Barrier Rectifiers  
Reverse Voltage 35 to 60 V  
Forward Current 10 A  
ITO-220AC (MBRF10Hxx)  
0.188 (4.77)  
0.172 (4.36)  
0.405 (10.27)  
0.383 (9.72)  
TO-220AC (MBR10Hxx)  
0.110 (2.80)  
0.100 (2.54)  
0.415 (10.54) MAX.  
0.185 (4.70)  
0.175 (4.44)  
0.154 (3.91)  
0.148 (3.74)  
DIA.  
0.131 (3.39)  
0.122 (3.08)  
0.140 (3.56)  
0.130 (3.30)  
0.370 (9.40)  
0.360 (9.14)  
0.055 (1.39)  
0.045 (1.14)  
DIA.  
DIA.  
0.113 (2.87)  
0.103 (2.62)  
0.676 (17.2)  
0.646 (16.4)  
0.600 (15.5)  
0.580 (14.5)  
0.145 (3.68)  
0.135 (3.43)  
0.350 (8.89)  
0.330 (8.38)  
0.603 (15.32)  
0.573 (14.55)  
PIN  
0.410 (10.41)  
0.390 (9.91)  
0.350 (8.89)  
0.330 (8.38)  
0.635 (16.13)  
0.625 (15.87)  
1
2
0.191 (4.85)  
0.171 (4.35)  
PIN  
1
2
1.148 (29.16)  
1.118 (28.40)  
0.160 (4.06)  
0.140 (3.56)  
0.110 (2.80)  
0.100 (2.54)  
0.560 (14.22)  
0.530 (13.46)  
0.110 (2.79)  
0.100 (2.54)  
0.060 (1.52)  
PIN 1  
0.560 (14.22)  
PIN 1  
PIN 2  
PIN 2  
0.530 (13.46)  
CASE  
0.037 (0.94)  
0.027 (0.69)  
0.022 (0.55)  
0.014 (0.36)  
0.205 (5.20)  
0.195 (4.95)  
0.105 (2.67)  
0.037 (0.94)  
0.027 (0.68)  
0.095 (2.41)  
0.022 (0.56)  
0.014 (0.36)  
0.205 (5.20)  
0.195 (4.95)  
Mounting Pad Layout TO-263AB  
TO-263AB (MBRB10Hxx)  
0.42  
(10.66)  
0.190 (4.83)  
0.160 (4.06)  
0.411 (10.45)  
0.380 (9.65)  
0.055 (1.40)  
0.045 (1.14)  
0.33  
(8.38)  
0.245 (6.22)  
MIN  
Dimensions in inches  
and (millimeters)  
K
0.63  
(17.02)  
0.055 (1.40)  
0.047 (1.19)  
0.360 (9.14)  
0.320 (8.13)  
0.624 (15.85)  
0.591 (15.00)  
K
1
2
0.08  
(2.032)  
0-0.01 (0-0.254)  
0.12  
(3.05)  
0.110 (2.79)  
0.090 (2.29)  
0.24  
(6.096)  
0.027 (0.686)  
0.037 (0.940)  
0.021 (0.53)  
0.014 (0.36)  
PIN 1  
PIN 2  
K - HEATSINK  
0.105 (2.67)  
0.095 (2.41)  
0.140 (3.56)  
0.110 (2.79)  
Features  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94 V-0  
0.205 (5.20)  
0.195 (4.95)  
• Metal silicon junction, majority carrier conduction  
• Low forward voltage drop, low power loss  
and high efficiency  
• Guardring for overvoltage protection  
• For use in low voltage, high frequency inverters, free  
wheeling, and polarity protection applications  
• High temperature soldering guaranteed:  
250 °C/10 seconds, 0.25" (6.35 mm) from case  
• Rated for reverse surge and ESD  
• 175 °C maximum operation junction temperature  
Mechanical Data  
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded  
plastic body  
Terminals: Plated leads, solderable per  
MIL-STD-750, Method 2026  
Polarity: As marked  
Mounting Position: Any  
Mounting Torque: 10 in-lbs maximum  
Weight: 0.08 oz., 2.24 g  
Document Number 88780  
03-Mar-03  
www.vishay.com  
1
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型号 品牌 获取价格 描述 数据表
MBR10H35-E3/45 VISHAY

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 		DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
MBR10H35-HE3/45 VISHAY

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 		DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
MBR10H45 VISHAY

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MBR10H45 KERSEMI

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 		Plastic package has Underwriters Laboratory Flammability Classification 94 V-0
MBR10H45/45-E3 VISHAY

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 		DIODE 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC PACKAGE-2, Rectifier Diode
MBR10H45-E3 VISHAY

获取价格

 		DIODE 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC PACKAGE-2, Rectifier Diode
MBR10H45-E3/45 VISHAY

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 		Schottky Barrier Rectifier
MBR10H45HE3/45 VISHAY

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 		Schottky Barrier Rectifier
MBR10H45-HE3/45 VISHAY

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 		DIODE 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, R

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