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MBR10H45-HE3/45

更新时间： 2024-11-19 04:58:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 133K
描述
DIODE 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode

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MBR10H45-HE3/45 数据手册

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MBR(F,B)10H35 thru MBR(F,B)10H60  
Vishay General Semiconductor  
Schottky Barrier Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
TO-220AC  
ITO-220AC  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
2
2
1
• High frequency operation  
1
MBR10Hxx  
MBRF10Hxx  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
PIN 1  
PIN 1  
CASE  
PIN 2  
PIN 2  
• Solder dip 260 °C, 40 s (for TO-220AC and  
ITO-220AC package)  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
2
1
TYPICAL APPLICATIONS  
MBRB10Hxx  
For use in low voltage, high frequency rectifier of  
switching mode power supplies, freewheeling diodes,  
dc-to-dc converters or polarity protection application.  
PIN 1  
K
HEATSINK  
PIN 2  
MECHANICAL DATA  
Case: TO-220AC, ITO-220AC, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
10 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
VRRM  
IFSM  
VF  
35 V to 60 V  
150 A  
0.55 V, 0.61 V  
100 µA  
IR  
TJ max.  
175 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL MBR10H35 MBR10H45 MBR10H50 MBR10H60 UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
V
Maximum DC blocking voltage  
V
Maximum average forward rectified current (Fig. 1)  
Non-repetitive avalanche energy at 25 °C, IAS = 4 A, L = 10 mH  
IF(AV)  
EAS  
10  
80  
A
mJ  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz  
Peak non-repetitive reverse energy (8/20 µs waveform)  
IRRM  
1.0  
20  
0.5  
10  
A
ERSM  
mJ  
Electrostatic discharge capacitor voltage human body model:  
C = 100 pF, R = 1.5 kΩ  
VC  
25  
kV  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/µs  
Document Number: 88780  
Revision: 19-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
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