Datasheet > MBR10L100CT-T

MBR10L100CT-T

更新时间： 2024-10-01 01:25:59

品牌	Logo	应用领域
竹懋 - CITC		/
页数	文件大小	规格书
3页	510K
描述
10A Trench Schottky Rectifier

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MBR10L100CT-T 数据手册

MBR10L100CT-T

10A Trench Schottky Rectifier

Chip Integration Technology Corporation

Main Product Characteristics

■ Outline

Dimensions in inches(millimeters)

TO-220AB

symbol

I_F(AV)

V_RRM

T_J

5 X 2A

Min

Max

ØP

0.398(10.1)

0.236(6.0)

0.579(14.7)

0.543(13.8)

0.143(3.63)

0.104(2.64)

0.335(8.5)

0.046(1.17)

0.028(0.71)

0.098(2.49)

0.176(4.47)

0.046(1.17)

0.102(2.6)

0.019(0.28)

0.147(3.74)

0.406(10.3)

0.252(6.4)

0.594(15.1)

0.551(14.0)

0.159(4.03)

0.112(2.84)

0.350(8.9)

0.054(1.37)

0.036(0.91)

0.102(2.59)

0.184(4.67)

0.054(1.37)

0.110(2.8)

0.021(0.48)

0.155(3.94)

100V

-55 to +150^OC

0.56V

V_F(Typ)

Marking code

■ Features

• Low forward voltage drop.

• Excellent high temperature stability.

• Fast switching capability.

ØP

Alternate

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

Dimensions in inches(millimeters)

symbol

Min

Max

0.413(10.5)

0.268(6.8)

ØP

0.394(10.0)

0.228(5.8)

0.570(14.48) 0.625(15.87)

0.519(13.18) 0.558(14.18)

■ Mechanical data

0.089(3.5)

0.100(2.54)

0.330(8.38)

0.045(1.15)

0.029(0.75)

0.095(2.42)

0.160(4.07)

0.045(1.15)

0.080(2.04)

0.013(0.33)

0.148(3.75)

0.099(3.9)

0.120(3.04)

0.350(8.9)

0.060(1.52)

0.037(0.95)

0.105(2.66)

0.190(4.82)

0.055(1.39)

0.110(2.8)

• Epoxy : UL94-V0 rated flame retardant.

• Case : JEDEC TO-220AB molded plastic body.

• Terminals : Solder plated, solderable per

MIL-STD-750, Method 2026.

• Polarity: As marked.

• Mounting Position : Any.

Marking code

ØP

0.019(0.52)

0.156(3.95)

• Weight : Approximated 2.25 gram.

Dimensions in inches and (millimeters)

■ Circuit Diagram

■ Maximum ratings and electrical characteristics

Rating at 25^OC ambient temperature unless otherwise specified.

Parameter

Conditions

Symbol

V_RWM

I_O

MBR10L100CT-T

UNIT

Working peak reverse voltage

Forward rectified current (total device)

100

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

I_FSM

150

Peak Forward surge current

Peak repetitive reverse surge current

Typical Thermal resistance (per leg)

2us-1Khz

I_RRM

R_θJC

R_θJA

^OC/W

^OC

Junction to case

Junction to ambient

Storage temperature

T_STG

T_J

-55 ~ +150

^OC

Operating Junction temperature

Parameter

Conditions

I_F= 3A, T_J= 25^OC

I_F= 5A, T_J= 25^OC

Symbol

V_F

MIN.

TYP.

550

630

560

MAX.

UNIT

Instantaneous Forward voltage drop

(per diode)

670

I_F= 5A, T_J= 125^OC

Instantaneous Reverse current

(per diode)

V_R= 100V

T_J= 25^OC

T_J= 125^OC

I_R

Reverse Breakdown Voltage (per diode)

I_R= 0.1mA, T_J= 25^OC

V_BR

100

Document ID : DS-11KHY

Revised Date : 2016/08/15

Revision : C1

12 3

中文翻译

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