Datasheet > MBR10H200CA-C

MBR10H200CA-C

更新时间： 2024-01-23 05:15:33

品牌	Logo	应用领域
RECTRON		二极管
页数	文件大小	规格书
5页	314K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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MBR10H200CA-C 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.67	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

MBR10H200CA-C 数据手册

MBR10H100C

THRU

MBR10H200C

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE 100 to 200 Volts CURRENT 10.0 Ampere

FEATURES

* Low switching noise

* Low forward voltage drop

* Low thermal resistance

* High current capability

* High switching capability

* High surge capabitity

* High reliability

(

)

.201 5.1

(

.159 4.04)

(

)

(

)

.170 4.31

.429 10.9

(

.131 3.34

(

)

.374 9.5

(

)

.055 1.4

.045 1.14

.129(3.27)

.087(2.22)

)

MECHANICAL DATA

(

.610 15.5)

* Case: T o-220 m olded plastic

(

.571 14.5)

* Epoxy: Device has UL ﬂammability classiﬁcation 94V-O

* Lead: MIL-STD-202Emethod 208C guaranteed

* Mounting position: Any

(

.176 4.46)

(

.124 3.16)

(

.576 14.62)

.514 13.06)

(

(0.94)

.037

(

.027 0.68)

(

)

.025 0.64

.121(3.07)

.079(2.01)

(

.011 0.28

.126(3.19)

(

.084 2.14)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters).

MAXIMUM RATINGS (@ T

=25 C unless otherwise noted)

MBR10H150C

MBR10H200C

200

SYMBOL

UNITS

Volts

MBR10H100C

RATINGS

100

V_RRM

V_RMS

V_DC

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

150

105

140

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

at Derating Case Temperature

200

100

150

I_O

Amps

A²S

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

I_FSM

100

I²

Typical Current Squared Time

2.0

J C

J A

Typical Thermal Resistance (Note 1)

⁰C/W

T_J

T_STG

⁰C

Operating Temperature Range

Storage Temperature Range

-55 to + 175

ELECTRICAL CHARACTERISTICS(@T

=25 C unless otherwise noted)

MBR10H100C

.85

MBR10H150C

.90

MBR10H200C

.95

CHARACTERISTICS

SYMBOL

V_F

UNITS

Volts

Maximum Instantaneous Forward Voltage at 5.0A DC

@T_A= 25^oC

Maximum Average Reverse Current

0.1

I_R

at Rated DC Blocking Voltage

@T_A= 150^oC

NOTES : 1. Thermal Resistance : Heat-sink mounted.

2. Suffix “A” = Common Anode.

2019-11/47

REV :

3. Measured at 1 MHz and applied reverse voltage of 4.0 volts.

4. "ROHS compliant".

12 3 4 5

中文翻译

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与MBR10H200CA-C相关器件

型号	品牌	获取价格	描述	数据表
MBR10H200CT	TSC	获取价格	10.0 AMPS. Schottky Barrier Rectifiers
MBR10H200CT	LGE	获取价格	10.0AMP. Schottky Barrier Rectifiers
MBR10H200CT(TO-220&220FP&263)	SISEMIC	获取价格	抗高浪性能高功效低正向电压大电流低功耗符合RoHS规范
MBR10H35	VISHAY	获取价格	Schottky Barrier Rectifiers
MBR10H35	KERSEMI	获取价格	Plastic package has Underwriters Laboratory Flammability Classification 94 V-0
MBR10H35/45	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 10A, 35V V(RRM)
MBR10H35/45-E3	VISHAY	获取价格	DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC PACKAGE-2, Rectifier Diode
MBR10H35-E3	VISHAY	获取价格	DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC PACKAGE-2, Rectifier Diode
MBR10H35-E3/45	VISHAY	获取价格	DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
MBR10H35HE3/45	VISHAY	获取价格	DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, R

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