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MBR10H150CT_08

更新时间： 2024-09-27 11:12:07
品牌 Logo 应用领域
威世 - VISHAY 高压
页数 文件大小 规格书
5页 129K
描述
Dual Common-Cathode High-Voltage Schottky Rectifier

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MBR10H150CT_08 数据手册

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MBR10H150CT, MBRF10H150CT & SB10H150CT-1  
Vishay General Semiconductor  
Dual Common-Cathode High-Voltage Schottky Rectifier  
Low Leakage Current 5.0 µA  
FEATURES  
TO-220AB  
ITO-220AB  
• Guardring for overvoltage protection  
• Low power loss, high efficiency  
• Low forward voltage drop  
• High frequency operation  
3
3
• Solder dip 260 °C, 40 s  
2
2
1
1
MBRF10H150CT  
TO-262AA  
MBR10H150CT  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in high frequency inverters, freewheeling and  
polarity protection applications.  
3
2
1
MECHANICAL DATA  
SB10H150CT-1  
PIN 1  
PIN 3  
PIN 2  
CASE  
Case: TO-220AB, ITO-220AB, TO-262AA  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
VF  
2 x 5 A  
150 V  
160 A  
0.72 V  
175 °C  
Mounting Torque: 10 in-lbs maximum  
Polarity: As marked  
TJ  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
MBR10H150CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
150  
150  
150  
V
V
V
VRWM  
VDC  
total device  
Maximum average forward rectified current (Fig. 1)  
per diode  
10  
5
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave superimposed  
on rated load per diode  
IFSM  
160  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)  
Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH  
Voltage rate of change (rated VR)  
IRRM  
ERSM  
EAS  
1.0  
10  
A
mJ  
mJ  
V/µs  
°C  
11.25  
dV/dt  
TJ, TSTG  
VAC  
10 000  
- 65 to + 175  
1500  
Operating junction and storage temperature range  
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min  
V
Document Number: 88779  
Revision: 18-Apr-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
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