Datasheet > MBR10H200CT

MBR10H200CT

更新时间： 2024-11-18 04:41:11

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
2页	100K
描述
10.0 AMPS. Schottky Barrier Rectifiers

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中文翻译

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数据手册

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MBR10H200CT 数据手册

MBR10H100CT - MBR10H200CT

10.0 AMPS. Schottky Barrier Rectifiers

RoHS

COMPLIANCE

TO-220AB

Features

Plastic material used carries Underwriters

Laboratory Classifications 94V-0

Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in power supply – output rectification, power

management, instrumentation

Guardring for overvoltage protection

High temperature soldering guaranteed:

260^oC/10 seconds,0.25”(6.35mm)from case

Mechanical Data

Cases: JEDEC TO-220AB molded plastic body

Terminals: Pure tin plated, lead free. solderable per

MIL-STD-750, Method 2026

Dimensions in inches and (millimeters)

Polarity: As marked

Mounting position: Any

Mounting torque: 5 in. - lbs. max

Weight: 0.08 ounce, 2.24 grams

Maximum Ratings and Electrical Characteristics

Rating at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

MBR

Units

Type Number

Symbol

10H100CT 10H150CT 10H200CT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

I_(AV)

I_FRM

I_FSM

I_RRM

at Tc=125^OC

Peak Repetitive Forward Current (Rated V_R,

Square Wave, 20KHz) at Tc=125^oC

Peak Forward Surge Current, 8.3 ms Single Half

Sine-wave Superimposed on Rated Load (JEDEC

method )

120

Peak Repetitive Reverse Surge Current (Note 1)

1.0

0.5

Maximum Instantaneous Forward Voltage at:

(Note 2)

I_F=5A, T_C=25^oC

I_F=5A, T_C=125^oC

I_F=10A, T_C=25^oC

I_F=10A, T_C=125^oC

0.85

0.75

0.95

0.85

0.88

0.75

0.97

0.85

V_F

Maximum Instantaneous Reverse Current

@ Tc =25 ^oC at Rated DC Blocking Voltage

I_R

@ Tc=125 ^oC

(Note 2)

1.0

Voltage Rate of Change (Rated V_R)

V/uS

dV/dt

10,000

Maximum Typical Thermal Resistance (Note 3)

^oC/W

θJC

1.5

^oC

Operating Junction Temperature Range

Storage Temperature Range

-65 to +175

T_J

T_STG

^oC

Notes:

1. 2.0us Pulse Width, f=1.0 KHz

2. Pulse Test: 300us Pulse Width, 1% Duty Cycle

3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in

Al-Plate.

Version: A07

中文翻译

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与MBR10H200CT相关器件

型号	品牌	获取价格	描述	数据表
MBR10H200CT(TO-220&220FP&263)	SISEMIC	获取价格	抗高浪性能高功效低正向电压大电流低功耗符合RoHS规范
MBR10H35	VISHAY	获取价格	Schottky Barrier Rectifiers
MBR10H35	KERSEMI	获取价格	Plastic package has Underwriters Laboratory Flammability Classification 94 V-0
MBR10H35/45	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 10A, 35V V(RRM)
MBR10H35/45-E3	VISHAY	获取价格	DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC PACKAGE-2, Rectifier Diode
MBR10H35-E3	VISHAY	获取价格	DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC, PLASTIC PACKAGE-2, Rectifier Diode
MBR10H35-E3/45	VISHAY	获取价格	DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
MBR10H35HE3/45	VISHAY	获取价格	DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
MBR10H35-HE3/45	VISHAY	获取价格	DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, R
MBR10H45	VISHAY	获取价格	Schottky Barrier Rectifiers

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