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MBR10H150CT PDF预览

MBR10H150CT

更新时间： 2024-11-20 04:41:11
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页数 文件大小 规格书
2页 100K
描述
10.0 AMPS. Schottky Barrier Rectifiers

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MBR10H150CT 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：GREEN, PLASTIC PACKAGE-3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.3Is Samacsys：N
其他特性：LOW POWER LOSS应用：EFFICIENCY
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
最大非重复峰值正向电流：120 A元件数量：2
相数：1端子数量：3
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：5 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：150 V表面贴装：NO
技术：SCHOTTKY端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MBR10H150CT 数据手册

 浏览型号MBR10H150CT的Datasheet PDF文件第2页 
MBR10H100CT - MBR10H200CT  
10.0 AMPS. Schottky Barrier Rectifiers  
Pb  
RoHS  
COMPLIANCE  
TO-220AB  
Features  
—
Plastic material used carries Underwriters  
Laboratory Classifications 94V-0  
—
—
—
—
—
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low forward voltage drop  
High surge capability  
For use in power supply – output rectification, power  
management, instrumentation  
—
—
Guardring for overvoltage protection  
High temperature soldering guaranteed:  
260oC/10 seconds,0.25”(6.35mm)from case  
Mechanical Data  
—
—
Cases: JEDEC TO-220AB molded plastic body  
Terminals: Pure tin plated, lead free. solderable per  
MIL-STD-750, Method 2026  
Dimensions in inches and (millimeters)  
—
—
—
—
Polarity: As marked  
Mounting position: Any  
Mounting torque: 5 in. - lbs. max  
Weight: 0.08 ounce, 2.24 grams  
Maximum Ratings and Electrical Characteristics  
Rating at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR  
MBR  
MBR  
Units  
Type Number  
Symbol  
10H100CT 10H150CT 10H200CT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
VRRM  
VRMS  
VDC  
100  
70  
100  
150  
105  
150  
200  
140  
200  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
I(AV)  
IFRM  
IFSM  
IRRM  
10  
32  
at Tc=125OC  
A
A
A
Peak Repetitive Forward Current (Rated VR,  
Square Wave, 20KHz) at Tc=125oC  
Peak Forward Surge Current, 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load (JEDEC  
method )  
120  
Peak Repetitive Reverse Surge Current (Note 1)  
A
V
1.0  
0.5  
Maximum Instantaneous Forward Voltage at:  
(Note 2)  
IF=5A, TC=25oC  
IF=5A, TC=125oC  
IF=10A, TC=25oC  
IF=10A, TC=125oC  
0.85  
0.75  
0.95  
0.85  
0.88  
0.75  
0.97  
0.85  
VF  
Maximum Instantaneous Reverse Current  
@ Tc =25 oC at Rated DC Blocking Voltage  
5
uA  
mA  
IR  
@ Tc=125 oC  
(Note 2)  
1.0  
Voltage Rate of Change (Rated VR)  
V/uS  
dV/dt  
10,000  
Maximum Typical Thermal Resistance (Note 3)  
oC/W  
R
θJC  
1.5  
oC  
Operating Junction Temperature Range  
Storage Temperature Range  
-65 to +175  
-65 to +175  
TJ  
TSTG  
oC  
Notes:  
1. 2.0us Pulse Width, f=1.0 KHz  
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle  
3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in  
Al-Plate.  
Version: A07  
12

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