型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MBM150GR12A | HITACHI |
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Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, | |
MBM150GR12A | RENESAS |
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150A, 1200V, N-CHANNEL IGBT | |
MBM150GR6 | HITACHI |
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Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, | |
MBM150GS6AW | HITACHI |
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Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, | |
MBM150GS6AW | RENESAS |
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150A, 600V, N-CHANNEL IGBT | |
MBM200A6 | HITACHI |
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IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES | |
MBM200GR6 | HITACHI |
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Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, | |
MBM200GR6 | RENESAS |
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200A, 600V, N-CHANNEL IGBT | |
MBM200GS12AW | HITACHI |
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Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES | |
MBM200H45E2-H | HITACHI |
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Insulated Gate Bipolar Transistor, 200A I(C), 4500V V(BR)CES |