Datasheet > MBM150GS6AW

MBM150GS6AW

更新时间： 2024-10-24 20:00:55

品牌	Logo	应用领域
日立 - HITACHI		局域网栅功率控制晶体管
页数	文件大小	规格书
4页	111K
描述
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel,

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MBM150GS6AW 数据手册

IGBT MODULE

MBM150GS6AW

Silicon N-channel IGBT

OUTLINE DRAWING

Unit in mm

4-Fast-on

Terminal

#110

FEATURES

3-M5

* High speed and low saturation voltage.

* low noise due to built-in free-wheeling

diode - ultra soft fast recovery diode(USFD).

* Isolated head sink (terminal to base).

2-φ5.6

C2E1

39.5

φ0.8

C2E1

TERMINALS

Weight: 200 (g)

ABSOLUTE MAXIMUM RATINGS (Tc=25 C )

Item

Symbol

V_CES

Unit

MBM150GS6AW

600

Collector Emitter Voltage

Gate Emitter Voltage

Collector Current

V_GES

I_C

I_Cp

I_F

I_FM

T_j

T_stg

V_ISO

150

300

150

300

450

1ms

(1)

Forward Current

1ms

Collector Power Dissipation

J unction Temperature

Storage Temperature

Isolation Voltage

-40 ~ +150

-40 ~ +125

2,500(AC 1 minute)

1.96(20)

V_RMS

Screw Torque

Terminals

Mounting

(2)

(3)

N.m

(kgf.cm)

Notes:(1)RMS Current of Diode 45Arms max.

(2)(3)Recommended Value 1.67N.m(17kgf.cm)

CHARACTERISTICS (Tc=25 C )

Item

Symbol Unit Min. Typ. Max.

Test Conditions

1.0 V_CE=600V,V_GE=0V

500 V_GE= 20V,V_CE=0V

Collector Emitter Cut-Off Current

I _CES

Gate Emitter Leakage Current

I_GES

Collector Emitter Saturation Voltage

Gate Emitter Threshold Voltage

Input Capacitance

V_CE(sat)

V_GE(TO)

C_ies

t_r

t_on

t_f

1.9

7,400

0.2

0.3

0.25

2.5 I_C=150A,V_GE=15V

10 V_CE=5V, I_C=150mA

V_CE=10V,V_GE=0V,f=1MHz

0.4 V_CC=300V

0.6 R =2.0

Rise Time

Turn On Time

Switching Times

Fall Time

0.35 R =16

(4)

Turn Off Time

Peak Forward Voltage Drop

t_off

V_FM

0.6

2.2

0.9 V_GE= 15V

3.0 I_F=150A,V_GE=0V

Reverse Recovery Time

Thermal Impedance IGBT

FWD

t_rr

0.3 I_F=150A,V_GE=-10V, di/dt=200A/ s

IGBT Rth(j-c)

FWD

0.28

0.6

J unction to case

Notes:(4) R_Gvalue is the test condition’s value for decision of the switching times, not recommended value.

Determine the suitable R_Gvalue after the measurement of switching waveforms

(overshoot voltage,etc.)with appliance mounted.

PDE-M150GS6AW-0

12 3 4

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