型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MBM200GR6 | HITACHI |
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Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, | |
MBM200GR6 | RENESAS |
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200A, 600V, N-CHANNEL IGBT | |
MBM200GS12AW | HITACHI |
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Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES | |
MBM200H45E2-H | HITACHI |
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Insulated Gate Bipolar Transistor, 200A I(C), 4500V V(BR)CES | |
MBM200JS12AW | RENESAS |
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IGBT | |
MBM200JS12AW | HITACHI |
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Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES | |
MBM200JS12EW | HITACHI |
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Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES | |
MBM200JS12EW | RENESAS |
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IGBT | |
MBM2212-20 | FUJITSU |
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MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY | |
MBM2212-20Z | FUJITSU |
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Non-Volatile SRAM, 256X4, 200ns, MOS, CDIP18 |