Datasheet > MBM200H45E2-H

MBM200H45E2-H

更新时间： 2024-10-24 20:49:27

品牌	Logo	应用领域
日立 - HITACHI		栅
页数	文件大小	规格书
10页	474K
描述
Insulated Gate Bipolar Transistor, 200A I(C), 4500V V(BR)CES

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MBM200H45E2-H 数据手册

IGBT MODULE

Spec.No.IGBT-SP-12010 R1 P1

Preliminary Specification

MBM200H45E2-H

Silicon N-channel IGBT 4500V E2 version

FEATURES

 Low switching loss IGBT module.

 Low noise due to ultra soft fast recovery diode.

 Isolated heat sink (terminal to base).

ABSOLUTE MAXIMUM RATINGS (Tc=25^oC )

Item

Collector Emitter Voltage

Gate Emitter Voltage

Symbol

V_CES

V_GES

I_C

Unit

MBM200H45E2-H

4,500

20

1ms

200 (Tc=80 ^oC)

Collector Current

Forward Current

I_Cp

I_F

I_FM

400

200

400

1ms

Peak Forward Surge Current

Total Power Dissipation

Junction Temperature

Junction Operating Temperature

Case Temperature

IFSM

Ptot

T_j

Tjop

T_stg

V_ISO

1500 (Tj=125℃, 50Hz, 10ms Half-sinewave)

1,960 (Tc=25℃ per IGBT)

-40 ~ +125

^oC

-40 ~ +125

^oC

Storage Temperature

Isolation Voltage

^oC

V_RMS

9,000 (AC 1 minute)

Terminals (M6)

Mounting (M6)

(1)

Screw Torque

N·m

Notes: (1) Recommended Value 5.50.5N·m

ELECTRICAL CHARACTERISTICS (IGBT)

Item

Symbol Unit

Min. Typ. Max.

Test Conditions

3.2

4.2

6.4

2.1

2.3

1.1

4.8

1.9

2.1

2.4

2.7

1.8

2.4

3.6

4.3

0.73

0.85

0.92

0.60

0.65

0.73

Tj=25^oC

Collector Emitter Cut-Off Current

Gate Emitter Leakage Current

Collector Emitter Saturation Voltage

I _CES

I_GES

V_CE=4,500V, V_GE=0V

16 Tj=125^oC

-500

3.5

5.4

+500 V_GE=20V, V_CE=0V, Tj=25^oC

4.5 Tj=25^oC

V_CE(sat)

I_C=200A, V_GE=15V

4.7 Tj=125^oC

Gate Emitter Threshold Voltage

Gate Charge

Input Capacitance

Output Capacitance

Reverse transfer capacitance

Internal Gate Resistance

V_GE(TO)

C_ies

C_oes

C_res

Rge

7.4 V_CE=10V, I_C=200mA, Tj=25^oC

C



V_CC=2800V, Ic=200A, V_GE=+/-15V

V_CE=10V,V_GE=0V, f=100kHz, Tj=25^oC

Tj=25^oC

Rise Time

t_r

t_on

t_f

4.2 Tj=125^oC

Tj=25^oC

5.4 Tj=125^oC

V_CC=2,800V, Ic=200A,

Ls=400nH,

Turn On Time

Switching Times

s

Tj=25^oC

3.6 Tj=125^oC

R_G=20Ω

(2),

Fall Time

V_GE=+/-15V

Tj=25^oC

6.7 Tj=125^oC

Tj=25^oC

Turn Off Time

t_off

E_on(full)

E_on(10%)

E_on(full)

E_off(full)

E_off(10%)

E_off(full)

Turn On Loss

J/p

1.30 Tj=125^oC

V_CC=2800V, Ic=200A,

Ls=400nH

Tj=125^oC

Tj=25^oC

R_G= 20Ω

(2)

1.00 Tj=125^oC

V_GE=+/-15V

Turn Off Loss

J/ p

Tj=125^oC

Notes:(3) R_Gvalue is the test condition’s value for evaluation of the switching times, not recommended value.

Please, determine the suitable R_Gvalue after the measurement of switching waveforms

(overshoot voltage, etc.) with appliance mounted.

* Please contact our representatives at order.

* For improvement, specifications are subject to change without notice.

* For actual application, please confirm this spec sheet is the newest revision.

12 3 4 5 6 7...10

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