IGBT MODULE
Spec.No.IGBT-SP-12010 R1 P1
Preliminary Specification
MBM200H45E2-H
Silicon N-channel IGBT 4500V E2 version
FEATURES
Low switching loss IGBT module.
Low noise due to ultra soft fast recovery diode.
Isolated heat sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25oC )
Item
Collector Emitter Voltage
Gate Emitter Voltage
Symbol
VCES
VGES
IC
Unit
V
V
MBM200H45E2-H
4,500
20
DC
1ms
DC
200 (Tc=80 oC)
Collector Current
Forward Current
A
A
ICp
IF
IFM
400
200
400
1ms
Peak Forward Surge Current
Total Power Dissipation
Junction Temperature
Junction Operating Temperature
Case Temperature
IFSM
Ptot
Tj
Tjop
Tc
Tstg
VISO
-
Ap
W
1500 (Tj=125℃, 50Hz, 10ms Half-sinewave)
1,960 (Tc=25℃ per IGBT)
-40 ~ +125
oC
oC
-40 ~ +125
-40 ~ +125
-40 ~ +125
oC
Storage Temperature
Isolation Voltage
oC
VRMS
9,000 (AC 1 minute)
Terminals (M6)
Mounting (M6)
6
6
(1)
(1)
Screw Torque
N·m
-
Notes: (1) Recommended Value 5.50.5N·m
ELECTRICAL CHARACTERISTICS (IGBT)
Item
Symbol Unit
Min. Typ. Max.
Test Conditions
-
-
-
4
-
3.2
4.2
6.4
2.1
28
2.3
1.1
4.8
1.9
2.1
2.4
2.7
1.8
2.4
3.6
4.3
0.73
0.85
0.92
0.60
0.65
0.73
7
Tj=25oC
Collector Emitter Cut-Off Current
Gate Emitter Leakage Current
Collector Emitter Saturation Voltage
I CES
IGES
mA
nA
V
VCE=4,500V, VGE=0V
16 Tj=125oC
-500
-
3.5
5.4
-
-
-
-
-
+500 VGE=20V, VCE=0V, Tj=25oC
4.5 Tj=25oC
VCE(sat)
IC=200A, VGE=15V
4.7 Tj=125oC
Gate Emitter Threshold Voltage
Gate Charge
Input Capacitance
Output Capacitance
Reverse transfer capacitance
Internal Gate Resistance
VGE(TO)
Qg
Cies
Coes
Cres
Rge
V
7.4 VCE=10V, IC=200mA, Tj=25oC
C
nF
nF
nF
-
-
-
-
-
-
VCC=2800V, Ic=200A, VGE=+/-15V
VCE=10V,VGE=0V, f=100kHz, Tj=25oC
VCE=10V,VGE=0V, f=100kHz, Tj=25oC
Tj=25oC
-
Rise Time
tr
ton
tf
-
-
-
-
-
-
-
-
4.2 Tj=125oC
-
Tj=25oC
5.4 Tj=125oC
VCC=2,800V, Ic=200A,
Ls=400nH,
Turn On Time
Switching Times
s
Tj=25oC
3.6 Tj=125oC
RG=20Ω
(2),
-
Fall Time
VGE=+/-15V
-
Tj=25oC
6.7 Tj=125oC
Tj=25oC
Turn Off Time
toff
Eon(full)
Eon(10%)
Eon(full)
Eoff(full)
Eoff(10%)
Eoff(full)
-
Turn On Loss
J/p
-
1.30 Tj=125oC
VCC=2800V, Ic=200A,
Ls=400nH
-
-
-
-
Tj=125oC
Tj=25oC
RG= 20Ω
(2)
1.00 Tj=125oC
VGE=+/-15V
Turn Off Loss
J/ p
-
-
Tj=125oC
Notes:(3) RG value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.