生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-XUFM-X7 |
Reach Compliance Code: | compliant | 风险等级: | 5.21 |
其他特性: | HIGH SPEED, LOW NOISE | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 150 A | 集电极-发射极最大电压: | 600 V |
配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | JESD-30 代码: | R-XUFM-X7 |
元件数量: | 2 | 端子数量: | 7 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 600 ns | 标称接通时间 (ton): | 300 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MBM200A6 | HITACHI |
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IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES | |
MBM200GR6 | HITACHI |
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Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, | |
MBM200GR6 | RENESAS |
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200A, 600V, N-CHANNEL IGBT | |
MBM200GS12AW | HITACHI |
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Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES | |
MBM200H45E2-H | HITACHI |
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Insulated Gate Bipolar Transistor, 200A I(C), 4500V V(BR)CES | |
MBM200JS12AW | RENESAS |
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IGBT | |
MBM200JS12AW | HITACHI |
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Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES | |
MBM200JS12EW | HITACHI |
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Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES | |
MBM200JS12EW | RENESAS |
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IGBT | |
MBM2212-20 | FUJITSU |
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MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY |