Datasheet > MBM150GR12A

MBM150GR12A

更新时间： 2024-10-24 20:05:51

品牌	Logo	应用领域
日立 - HITACHI		局域网栅功率控制晶体管
页数	文件大小	规格书
4页	75K
描述
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel,

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MBM150GR12A 数据手册

PDE-M150GR12A-0

Hitachi IGBT Module / Silicon N-Channel IGBT

MBM150GR12A

[Rated 150A/1200V, Dual-pack type]

FEATURES

OUTLINE DRAWING

• Low saturation voltage and high speed.

Unit in mm

• Low turn-OFF switching loss.

4-Fast-on

Terminal #110

• Low noise due to built-in free-wheeling diode.

(Ultra Soft and Fast recovery Diode (USFD))

• High reliability structure.

2- φ 5.6

18.5

• Isolated heat sink (terminals to base).

CIRCUIT DIAGRAM

C2E1

3-M5

φ 0.8

C2E1

Weight：230g

ABSOLUTE MAXIMUM RATINGS (T_C=25°C)

Item

Collector-Emitter Voltage

Gate-Emitter Voltage

Symbol

V_CES

V_GES

I_C

Unit

Value

1200

±20

150

Collector Current

Forward Current

1ms

I_CP

300

I_F

150

300

1ms

I_FM

Collector Power Dissipation

Junction Temperature

Storage Temperature

Isolation Voltage

P_C

°C

1000

T_j

-40 ~ +150

-40 ~ +125

T_stg

V_iso

V_RMS

2500(AC 1 minute)

Terminals

Mounting

1.96

Screw Torque

N·m

1.96

Notes; *1 : RMS current of diode ≤ 45 Arms

*2 ,*3 : Recommended value 1.67 N·m

CHARACTERISTICS (T_C=25°C)

Item

Symbol

Unit

Min.

Typ.

2.2

Max.

1.0

Test Conditions

V_CE=1200V, V_GE=0V

_GE=±20V, V_CE=0V

Collector-Emitter Cut-Off Current

Gate-Emitter Leakage Current

Collector-Emitter Saturation Voltage

Gate-Emitter Threshold Voltage

Input Capacitance

I_CES

I_GES

V_CE(sat)

V_GE(TO)

C_ies

t_r

±500

2.8

I_C=150A, V_GE=15V

V_CE=5V, I_C=150mA

12000

0.15

0.3

V_CE=10V, V_GE=0V, f=1MHz

Rise Time

0.3

0.6

_CC=600V, I_C=150A

Turn-On Time

Switching Times

t_on

R_G=8.2Ω

_GE=±15V

µs

Fall Time

t_f

0.1

0.3

Inductive Load

I_F=150A

Turn-Off Time

Reverse Recovery Time

t_off

0.5

1.0

t_rr

0.2

0.4

µs

Peak Forward Voltage Drop

V_FM

R_th(j-c)

2.5

3.5

I_F=150A, V_GE=0V

Junction to case

IGBT

Thermal Impedance

FWD

0.125

0.30

°C/W

Notes; *4 : R_Gvalue is the test condition’s value for decision of the switching times, not recommended value, please determine

the suitable R_Gvalue after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.

Remark; For actual application,please confirm this spec.sheet is the newest revision.

12 3 4

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与MBM150GR12A相关器件

型号	品牌	获取价格	描述	数据表
MBM150GR6	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel,
MBM150GS6AW	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel,
MBM150GS6AW	RENESAS	获取价格	150A, 600V, N-CHANNEL IGBT
MBM200A6	HITACHI	获取价格	IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
MBM200GR6	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel,
MBM200GR6	RENESAS	获取价格	200A, 600V, N-CHANNEL IGBT
MBM200GS12AW	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES
MBM200H45E2-H	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 200A I(C), 4500V V(BR)CES
MBM200JS12AW	RENESAS	获取价格	IGBT
MBM200JS12AW	HITACHI	获取价格	Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES

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