是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | LFBGA, BGA65,10X10,32 |
针数: | 65 | Reach Compliance Code: | compliant |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.92 |
Is Samacsys: | N | 最长访问时间: | 70 ns |
其他特性: | MOBILE FCRAM IS ORGANIZED AS 2M X 16 | JESD-30 代码: | S-PBGA-B65 |
JESD-609代码: | e0 | 长度: | 9 mm |
内存密度: | 67108864 bit | 内存集成电路类型: | MEMORY CIRCUIT |
内存宽度: | 16 | 混合内存类型: | FLASH+PSRAM |
功能数量: | 1 | 端子数量: | 65 |
字数: | 4194304 words | 字数代码: | 4000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -30 °C | 组织: | 4MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LFBGA |
封装等效代码: | BGA65,10X10,32 | 封装形状: | SQUARE |
封装形式: | GRID ARRAY, LOW PROFILE, FINE PITCH | 峰值回流温度(摄氏度): | 240 |
电源: | 3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.34 mm | 最大待机电流: | 0.000005 A |
子类别: | Other Memory ICs | 最大压摆率: | 0.045 mA |
最大供电电压 (Vsup): | 3.1 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | TIN LEAD | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 30 | 宽度: | 9 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MB84VP24491HK | FUJITSU |
获取价格 |
128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM | |
MB84VP24491HK-70 | CYPRESS |
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Memory IC, | |
MB84VP24491HK-70PBS | FUJITSU |
获取价格 |
128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM | |
MB84VP24491HK-70PBS | SPANSION |
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Memory Circuit, 8MX16, CMOS, PBGA73, PLASTIC, FBGA-73 | |
MB84VP24491HK-70PBS-E1 | SPANSION |
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Memory Circuit, 8MX16, CMOS, PBGA73, PLASTIC, FBGA-73 | |
MB84VR5E4J4J1-85-PBS | FUJITSU |
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Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA85, PLASTIC, FBGA-85 | |
MB84VZ064A | FUJITSU |
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Memory IC | |
MB84VZ064D-70PBS | FUJITSU |
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Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA107, PLASTIC, FBGA-107 | |
MB84VZ064D-70PBS | SPANSION |
获取价格 |
Memory Circuit, 4MX16, CMOS, PBGA107, PLASTIC, FBGA-107 | |
MB84VZ064D-70PBS-E1 | SPANSION |
获取价格 |
Memory Circuit, 4MX16, CMOS, PBGA107, PLASTIC, FBGA-107 |