是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | LFBGA, |
针数: | 115 | Reach Compliance Code: | compliant |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.77 |
Is Samacsys: | N | 其他特性: | FCRAM IS ORGANIZED AS 4M X 16; SRAM IS ORGANIZED AS 512K X 16; CONTAINS ADDITIONAL 4M X 16 FLASH |
JESD-30 代码: | R-PBGA-B115 | JESD-609代码: | e0 |
长度: | 12 mm | 内存密度: | 134217728 bit |
内存集成电路类型: | MEMORY CIRCUIT | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 115 |
字数: | 8388608 words | 字数代码: | 8000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -25 °C | 组织: | 8MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, LOW PROFILE, FINE PITCH |
峰值回流温度(摄氏度): | 240 | 认证状态: | Not Qualified |
座面最大高度: | 1.35 mm | 最大供电电压 (Vsup): | 3.1 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子面层: | TIN LEAD |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 30 |
宽度: | 9 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MB84VZ128B-70PBS-E1 | SPANSION |
获取价格 |
Memory Circuit, 8MX16, CMOS, PBGA115, PLASTIC, FBGA-115 | |
MB84VZ128C-70PBS | SPANSION |
获取价格 |
Memory Circuit, 8MX16, CMOS, PBGA115, PLASTIC, FBGA-115 | |
MB84VZ128C-70PBS | FUJITSU |
获取价格 |
Memory Circuit, Flash+PSRAM+SRAM, Hybrid, PBGA115 | |
MB84VZ128C-70PBS-E1 | SPANSION |
获取价格 |
Memory Circuit, 8MX16, CMOS, PBGA115, PLASTIC, FBGA-115 | |
MB8501E064AD-60DG | FUJITSU |
获取价格 |
EDO DRAM Module, 1MX64, 60ns, CMOS, PDMA168 | |
MB8501E064AD-70DG | FUJITSU |
获取价格 |
EDO DRAM Module, 1MX64, 70ns, CMOS, PDMA168 | |
MB8501S064AC-100DG | FUJITSU |
获取价格 |
Synchronous DRAM Module, 1MX64, 8.5ns, CMOS, PDMA168 | |
MB8501S064AC-67DG | FUJITSU |
获取价格 |
Synchronous DRAM Module, 1MX64, 9ns, CMOS, PDMA168 | |
MB8501S064AC-84DG | FUJITSU |
获取价格 |
Synchronous DRAM Module, 1MX64, 8.5ns, CMOS, PDMA168 | |
MB8501S064AD-100DG | FUJITSU |
获取价格 |
Synchronous DRAM Module, 1MX64, 8.5ns, CMOS, PDMA144 |