Datasheet > MB84VD23481FJ-70

MB84VD23481FJ-70

更新时间： 2024-11-30 02:54:23

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MB84VD23481FJ-70 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-50310-2E

Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM

CMOS

64 M (×16) FLASH MEMORY &

32 M (×16) Mobile FCRAM^TM

MB84VD23481FJ^-70

■ FEATURES

• Power Supply Voltage of 2.7 V to 3.1 V

• High Performance

70 ns maximum access time (Flash)

70 ns maximum access time (FCRAM)

• Operating Temperature

−30 °C to +85 °C

• Package 65-ball FBGA

(Continued)

■ PRODUCT LINE-UP

Flash Memory

FCRAM

Power Supply Voltage ( V )

Max Address Access Time (ns)

Max CE Access Time (ns)

Max OE Access Time (ns)

V^CCf* = 2.7 V to 3.1 V

V^CCr* = 2.7 V to 3.1 V

*: Both V^CCf and V^CCr must be the same level when either part is being accessed.

■ PACKAGE

65-ball plastic FBGA

(BGA-65P-M01)

12 3 4 5 6 7...55

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型号	品牌	获取价格	描述	数据表
MB84VD23481FJ-70PBS	SPANSION	获取价格	64 M (】16) FLASH MEMORY & 32 M (】16) Mobile F
MB84VD23581FJ-70	SPANSION	获取价格	64 M ( x 16) FLASH MEMORY & 64 M ( x 16) Mobile FCRAM
MB84VD23581FJ-70PBS	SPANSION	获取价格	64 M ( x 16) FLASH MEMORY & 64 M ( x 16) Mobile FCRAM
MB84VD23581FJ-70PBS-E1	SPANSION	获取价格	Memory Circuit, 4MX16, CMOS, PBGA65, PLASTIC, FBGA-65
MB84VF5F4F4J1-70PBS	SPANSION	获取价格	Memory Circuit, 4MX16, CMOS, PBGA107, PLASTIC, FBGA-107
MB84VF5F4F4J1-70PBS-E1	SPANSION	获取价格	Memory Circuit, 4MX16, CMOS, PBGA107, PLASTIC, FBGA-107
MB84VF5F4F5J1-70PBS	FUJITSU	获取价格	Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA107, PLASTIC, FBGA-107
MB84VF5F5F4J2-70PBS	FUJITSU	获取价格	Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA107, PLASTIC, FBGA-107
MB84VF5F5F4J2-70PBS-E1	SPANSION	获取价格	Memory Circuit, 4MX16, CMOS, PBGA107, PLASTIC, FBGA-107
MB84VF5F5F5J2-70PBS	FUJITSU	获取价格	Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA107, PLASTIC, FBGA-107