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MB84VP23481FK-70 PDF预览

MB84VP23481FK-70

更新时间: 2024-12-01 02:54:23
品牌 Logo 应用领域
飞索 - SPANSION 闪存手机
页数 文件大小 规格书
67页 879K
描述
64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM

MB84VP23481FK-70 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-50224-1E  
Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM  
CMOS  
64M (×16) Page FLASH MEMORY &  
32M (×16) Mobile FCRAMTM  
MB84VP23481FK-70  
FEATURES  
• Power Supply Voltage of 2.7 V to 3.1 V  
• High Performance  
25 ns maximum page read access time, 65 ns maximum random access time (Flash)  
20 ns maximum page read access time, 70 ns maximum random access time (FCRAM)  
• Operating Temperature  
–30 °C to +85 °C  
• Package 65-ball FBGA  
(Continued)  
PRODUCT LINEUP  
Flash  
FCRAM  
+0.1V  
–0.3 V  
+0.1V  
–0.3 V  
Supply Voltage (V)  
VCCf* = 3.0 V  
VCCr* = 3.0 V  
Max Random Address Access Time (ns)  
Max Page Address Access Time (ns)  
Max CE Access Time (ns)  
65  
25  
65  
25  
70  
20  
70  
40  
Max OE Access Time (ns)  
*: Both VCCf and VCCr must be the same level when either part is being accessed.  
PACKAGE  
65-ball plastic FBGA  
(BGA-65P-M01)  

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