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MB84VA2004 PDF预览

MB84VA2004

更新时间: 2024-09-16 22:16:27
品牌 Logo 应用领域
富士通 - FUJITSU 闪存
页数 文件大小 规格书
29页 331K
描述
8M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM

MB84VA2004 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-50106-1E  
MCP (Multi-Chip Package) FLASH MEMORY & SRAM  
CMOS  
8M (× 8) FLASH MEMORY &  
1M (× 8) STATIC RAM  
MB84VA2004-10/MB84VA2005-10  
FEATURES  
• Power supply voltage of 2.7 to 3.6 V  
• High performance  
100 ns maximum access time  
• Operating Temperature  
–20 to +85°C  
— FLASH MEMORY  
• Minimum 100,000 write/erase cycles  
• Sector erase architecture  
One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes.  
Any combination of sectors can be concurrently erased. Also supports full chip erase.  
• Boot Code Sector Architecture  
MB84VA2004: Top sector  
MB84VA2005: Bottom sector  
• Embedded EraseTM Algorithms  
Automatically pre-programs and erases the chip or any sector  
• Embedded ProgramTM Algorithms  
Automatically writes and verifies data at specified address  
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion  
• Ready-Busy output (RY/BY)  
Hardware method for detection of program or erase cycle completion  
• Automatic sleep mode  
When addresses remain stable, automatically switch themselves to low power mode.  
• Low VCC write inhibit 2.5 V  
• Erase Suspend/Resume  
Suspends the erase operation to allow a read in another sector within the same device  
• Please refer to "MBM29LV800TA/BA" data sheet in detailed function  
— SRAM  
• Power dissipation  
Operating: 35 mA max.  
Standby : 30 µA max.  
• Power down features using CE1s and CE2s  
• Data retention supply voltage: 2.0 V to 3.6 V  
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.  

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