Datasheet > MB84VA2104

MB84VA2104

更新时间： 2024-11-06 22:46:23

品牌	Logo	应用领域
富士通 - FUJITSU		闪存
页数	文件大小	规格书
29页	378K
描述
16M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM

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数据手册

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MB84VA2104 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-50108-1E

MCP (Multi-Chip Package) FLASH MEMORY & SRAM

CMOS

16M (× 8) FLASH MEMORY &

1M (× 8) STATIC RAM

MB84VA2104^-10/MB84VA2105^-10

■ FEATURES

• Power supply voltage of 2.7 to 3.6 V

• High performance

100 ns maximum access time

• Operating Temperature

–20 to +85°C

— FLASH MEMORY

• Minimum 100,000 write/erase cycles

• Sector erase architecture

One 16 K byte, two 8 K bytes, one 32 K byte, and thirty one 64 K bytes.

Any combination of sectors can be concurrently erased. Also supports full chip erase.

• Boot Code Sector Architecture

MB84VA2104: Top sector

MB84VA2105: Bottom sector

• Embedded Erase^TMAlgorithms

Automatically pre-programs and erases the chip or any sector

• Embedded Program^TMAlgorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready-Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switch themselves to low power mode.

• Low V^CCwrite inhibit ≤ 2.5 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read in another sector within the same device

Please refer to "MBM29LV160T/B" data sheet in detailed function

— SRAM

• Power dissipation

Operating: 35 mA max.

Standby : 30 µA max.

• Power down features using CE1s and CE2s

• Data retention supply voltage: 2.0 V to 3.6 V

Embedded Erase^TMand Embedded Program^TMare trademarks of Advanced Micro Devices, Inc.

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与MB84VA2104相关器件

型号	品牌	获取价格	描述	数据表
MB84VA2104-10	FUJITSU	获取价格	16M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM
MB84VA2105	FUJITSU	获取价格	16M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM
MB84VA2105-10	FUJITSU	获取价格	16M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM
MB84VA2106	FUJITSU	获取价格	16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
MB84VA2106-10	FUJITSU	获取价格	16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
MB84VA2107	FUJITSU	获取价格	16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
MB84VA2107-10	FUJITSU	获取价格	16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
MB84VA2108-10	FUJITSU	获取价格	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA48, PLASTIC, FBGA-48
MB84VA2109-10	FUJITSU	获取价格	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA48, PLASTIC, FBGA-48
MB84VB2000	FUJITSU	获取价格	8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY