Datasheet > MB84VD2008

MB84VD2008

更新时间： 2024-09-16 22:16:15

品牌	Logo	应用领域
富士通 - FUJITSU		存储
页数	文件大小	规格书
30页	372K
描述
8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM

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数据手册

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MB84VD2008 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-50111-1E

MCP (Multi-Chip Package) FLASH MEMORY & SRAM

CMOS

8M (× 16) FLASH MEMORY &

2M (× 16) STATIC RAM

MB84VD2008^-10/MB84VD2009^-10

■ FEATURES

• Power supply voltage of 2.7 to 3.6 V

• High performance

100 ns maximum access time

• Operating Temperature

–20 to +85°C

— FLASH MEMORY

• Simultaneous operations Read-while Erase or Read-while-Program

• Minimum 100,000 write/erase cycles

• Sector erase architecture

Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes.

Any combination of sectors can be concurrently erased. Also supports full chip erase.

• Boot Code Sector Architecture

MB84VD2008: Top sector

MB84VD2009: Bottom sector

• Embedded Erase^TMAlgorithms

Automatically pre-programs and erases the chip or any sector

• Embedded Program^TMAlgorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready-Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switch themselves to low power mode.

• Low V^CCwrite inhibit ≤ 2.5 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read in another sector within the same device

• Please refer to "MBM29DL800TA/BA" data sheet in detailed function

— SRAM

• Power dissipation

Operating: 50 mA max.

Standby : 50 µA max.

• Data retention supply voltage: 2.0 V to 3.6 V

Embedded Erase^TMand Embedded Program^TMare trademarks of Advanced Micro Devices, Inc.

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与MB84VD2008相关器件

型号	品牌	获取价格	描述	数据表
MB84VD2008-10	FUJITSU	获取价格	8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
MB84VD2009	FUJITSU	获取价格	8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
MB84VD2009-10	FUJITSU	获取价格	8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
MB84VD21081	FUJITSU	获取价格	16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
MB84VD21081-85-PBS	FUJITSU	获取价格	16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
MB84VD21081-85-PTS	FUJITSU	获取价格	16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
MB84VD21081DA-85PBS	FUJITSU	获取价格	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA61, PLASTIC, BGA-61
MB84VD21081EA-85-PBS	FUJITSU	获取价格	SPECIALTY MEMORY CIRCUIT, PBGA56, PLASTIC, FBGA-56
MB84VD21081EA-85-PTS	FUJITSU	获取价格	SPECIALTY MEMORY CIRCUIT, PDSO56, PLASTIC, TSOP1-56
MB84VD21081EM-70PBS	SPANSION	获取价格	16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM