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MB84VD21082EM-70PBS PDF预览

MB84VD21082EM-70PBS

更新时间: 2024-11-09 20:25:47
品牌 Logo 应用领域
富士通 - FUJITSU 静态存储器内存集成电路
页数 文件大小 规格书
53页 762K
描述
Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA56, PLASTIC, BGA-56

MB84VD21082EM-70PBS 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
包装说明:TFBGA, BGA56,8X8,32Reach Compliance Code:compliant
HTS代码:8542.32.00.71风险等级:5.23
Is Samacsys:N最长访问时间:70 ns
其他特性:SRAM IS ORGANIZED AS 128K X 16/256K X 8JESD-30 代码:R-PBGA-B56
JESD-609代码:e0长度:7.2 mm
内存密度:16777216 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16混合内存类型:FLASH+SRAM
功能数量:1端子数量:56
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA56,8X8,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH峰值回流温度(摄氏度):NOT SPECIFIED
电源:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.000004 A
子类别:Other Memory ICs最大压摆率:0.05 mA
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7 mm
Base Number Matches:1

MB84VD21082EM-70PBS 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
SMCP0.3E  
Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM  
CMOS  
16M (×8/×16) FLASH MEMORY &  
2M (×8/×16) STATIC RAM  
MB84VD2108XEM-70/MB84VD2109XEM-70  
FEATURES  
• Power Supply Voltage of 2.7 V to 3.3 V  
• High Performance  
70 ns maximum access time (Flash)  
70 ns maximum access time (SRAM)  
• Operating Temperature  
–40°C to +85°C  
• Package 56-ball BGA  
(Continued)  
PRODUCT LINE UP  
Part No.  
MB84VD2108XEM/MB84VD2109XEM  
+0.3 V  
–0.3 V  
+0.3V  
Supply Voltage(V)  
VCCf= 3.0V  
VCCs= 3.0V  
–0.3 V  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
70  
70  
30  
70  
70  
35  
Note: Both VCCf and VCCs must be in recommended operation range when either part is being accessed.  
PACKAGE  
56-ball plastic BGA  
(BGA-56P-M02)  

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