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MB84VB2000-10 PDF预览

MB84VB2000-10

更新时间: 2024-11-06 22:16:55
品牌 Logo 应用领域
富士通 - FUJITSU 存储
页数 文件大小 规格书
28页 295K
描述
8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY

MB84VB2000-10 数据手册

 浏览型号MB84VB2000-10的Datasheet PDF文件第2页浏览型号MB84VB2000-10的Datasheet PDF文件第3页浏览型号MB84VB2000-10的Datasheet PDF文件第4页浏览型号MB84VB2000-10的Datasheet PDF文件第5页浏览型号MB84VB2000-10的Datasheet PDF文件第6页浏览型号MB84VB2000-10的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-50102-2E  
MCP (Multi-Chip Package) FLASH MEMORY  
CMOS  
8M (× 8/× 16) FLASH MEMORY &  
8M (× 8/× 16) FLASH MEMORY  
MB84VB2000-10/MB84VB2001-10  
FEATURES  
• Contain 2 chips of MBM29LV800A, and each chip have separate CE.  
• Power supply voltage of 2.7 to 3.6 V  
• High performance  
100 ns maximum access time  
• Operating Temperature  
–40 to +85°C  
• Minimum 100,000 write/erase cycles  
• Sector erase architecture  
One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes × 2 chips  
Any combination of sectors can be concurrently erased. Also supports full chip erase.  
• Boot Code Sector Architecture  
MB84VB2000: Top sector  
MB84VB2001: Bottom sector  
• Embedded EraseTM Algorithms  
Automatically pre-programs and erases the chip or any sector  
• Embedded ProgramTM Algorithms  
Automatically writes and verifies data at specified address  
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion  
• Ready/Busy output (RY/BY)  
Hardware method for detection of program or erase cycle completion  
• Automatic sleep mode  
When addresses remain stable, automatically switch themselves to low power mode.  
• Low VCC write inhibit 2.5 V  
• Erase Suspend/Resume  
Suspends the erase operation to allow a read data in another sector within the same device  
• Please refer to "MBM29LV800TA/BA" data sheet in detailed function  
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.  

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