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MB82D01171A-80LLPBN PDF预览

MB82D01171A-80LLPBN

更新时间: 2024-09-18 04:08:35
品牌 Logo 应用领域
富士通 - FUJITSU 存储内存集成电路静态存储器手机
页数 文件大小 规格书
27页 249K
描述
16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory

MB82D01171A-80LLPBN 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TFBGA, BGA48,6X8,30Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92Is Samacsys:N
最长访问时间:80 ns其他特性:ALSO OPERATES AT 2.7V TO 3.1V SUPPLY
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
JESD-609代码:e0长度:9 mm
内存密度:16777216 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:48字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-30 °C
组织:1MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2.5/3.3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.00007 A子类别:Other Memory ICs
最大压摆率:0.025 mA最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:6 mmBase Number Matches:1

MB82D01171A-80LLPBN 数据手册

 浏览型号MB82D01171A-80LLPBN的Datasheet PDF文件第2页浏览型号MB82D01171A-80LLPBN的Datasheet PDF文件第3页浏览型号MB82D01171A-80LLPBN的Datasheet PDF文件第4页浏览型号MB82D01171A-80LLPBN的Datasheet PDF文件第5页浏览型号MB82D01171A-80LLPBN的Datasheet PDF文件第6页浏览型号MB82D01171A-80LLPBN的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-11404-2E  
MEMORY Mobile FCRAMTM  
CMOS  
16 Mbit (1 M word × 16 bit)  
Mobile Phone Application Specific Memory  
MB82D01171A-80/80L/80LL/85/85L/85LL/90/90L/90LL  
CMOS 1,048,576-WORD × 16 BIT  
Fast Cycle Random Access Memory  
with Low Power SRAM Interface  
DESCRIPTION  
The Fujitsu MB82D01171A is a CMOS Fast Cycle Random Access Memory (FCRAM) with asynchronous Static  
Random Access Memory (SRAM) interface containing 16,777,216 storages accessible in a 16-bit format. This  
MB82D01171A is suited for low power applications such as Cellular Handset and PDA.  
Note: FCRAM is a trademark of Fujitsu Limited, Japan.  
PRODUCT LINEUP  
MB82D01171A  
Parameter  
80  
80L  
80LL  
85  
85L  
85LL  
90  
90L  
90LL  
Access Time (tAA Max, tCE Max)  
Active Current (IDDA1 Max)  
80 ns  
85 ns  
20 mA  
90 ns  
Standby Current (IDDS1 Max)  
Power Down Current (IDDP Max)  
200 µA 100 µA 70 µA 200 µA 100 µA 70 µA 200 µA 100 µA 70 µA  
10 µA  
PACKAGES  
48-ball plastic FBGA  
48-ball plastic FBGA  
(BGA-48P-M16)  
(BGA-48P-M18)  

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MB82D01171A-85LLPBT FUJITSU

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16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory