Datasheet > MAGX-001214-SB0PPR

MAGX-001214-SB0PPR

更新时间： 2024-11-09 12:21:47

品牌	Logo	应用领域
泰科 - TE		晶体晶体管脉冲
页数	文件大小	规格书
6页	786K
描述
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300Î¼s Pulse, 10% Duty

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MAGX-001214-125L00

GaN on SiC HEMT Pulsed Power Transistor

125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty

Production V1

18 Aug 11

Features



GaN depletion mode HEMT microwave transistor

Internally matched

Common source configuration

Broadband Class AB operation

RoHS Compliant

+50V Typical Operation

MTTF of 114 years (Channel Temperature < 200°C)

Applications



L-Band Pulsed Radar

Product Description

The MAGX-001214-125L00 is a gold metalized matched

Gallium Nitride (GaN) on Silicon Carbide RF power transistor

optimized for pulsed L-Band radar applications. Using state

of the art wafer fabrication processes, these high

performance transistors provide high gain, efficiency,

bandwidth, ruggedness over a wide bandwidth for today’s

demanding application needs. High breakdown voltages

allow for reliable and stable operation in extreme

mismatched load conditions unparalleled with older

semiconductor technologies.

Typical RF Performance at Pout = 125W Peak

Freq

(MHz)

1200

1250

1300

1350

1400

(W)

1.8

1.9

2.0

1.9

1.8

Gain

(dB)

18.3

18.1

18.0

18.1

18.4

Slope

Eff

Avg-Eff

Droop

(dB)

0.4

(dB)

(A)

4.0

4.2

4.4

4.3

3.9

(%)

(dB)

-9.0

43.0

59.0

56.5

57.7

62.9

-11.6

-16.0

-19.0

-14.5

0.6

0.5

0.4

59.8

0.3

Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows:

Vdd=50V, Idq=100mA (pulsed), F=1200-1400 MHz, Pulse=300us, Duty=10%.

Ordering Information

MAGX-001214-125L00 125W GaN Power Transistor

MAGX-001214-SB0PPR Evaluation Fixture

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

• North America Tel: 800.366.2266 / Fax: 978.366.2266

Solutions is considering for development. Performance is based on target specifications, simu-

lated results, and/or prototype measurements. Commitment to develop is not guaranteed.

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

12 3 4 5 6

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与MAGX-001214-SB0PPR相关器件

型号	品牌	获取价格	描述	数据表
MAGX-001214-SB1PPR	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor 250W
MAGX-001214-SB3PPR	TE	获取价格	GaN on SiC Depletion-Mode Transistor Technology Internally Matched
MAGX-001220-100L00	TE	获取价格	GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz
MAGX-001220-1SB1PPR	TE	获取价格	GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz
MAGX-002731-030L00	TE	获取价格	GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
MAGX-002731-100L00	TE	获取价格	GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
MAGX-002731-180L00	TE	获取价格	GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty
MAGX-002731-180L0S	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-002731-180L0X	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-002731-SB1PPR	TE	获取价格	GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle

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