Datasheet > MAGX-001220-1SB1PPR

MAGX-001220-1SB1PPR

更新时间： 2024-11-09 12:21:47

品牌	Logo	应用领域
泰科 - TE		晶体晶体管
页数	文件大小	规格书
6页	833K
描述
GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz

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MAGX-001220-100L00

GaN HEMT Power Transistor

100W Peak, 1.2 - 2.0 GHz

Production V1

19 Sept 11

Features



GaN depletion mode HEMT microwave transistor

Common source configuration

Broadband Class AB operation

Thermally enhanced Cu/Mo/Cu package

RoHS Compliant

+50V Typical Operation

MTTF of 114 years (Channel Temperature < 200°C)

Applications

General purpose for pulsed or CW applications



Commercial Wireless Infrastructure

- WCDMA, LTE, WIMAX

Civilian and Military Radar

Military and Commercial Communications

Public Radio

Industrial, Scientific and Medical

SATCOM

Instrumentation



DTV

Product Description

Typical CW RF Performance

The MAGX-001220-100L00 is a gold metalized

Gallium Nitride (GaN) on Silicon Carbide RF power

transistor suitable for a variety of RF power

Freq.

Gain

(dB)

Id-Pk

(A)

Eff

Pout

(W Peak) (W Peak)

(MHz)

(%)

amplifier applications. Using state of the art wafer

fabrication processes, these high performance

transistors provide high gain, efficiency, bandwidth,

ruggedness over multiple octave bandwidths for

today’s demanding application needs. The MAGX-

001220-100L00 is constructed using a thermally

enhanced Cu/Mo/Cu flanged ceramic package

which provides excellent thermal performance. High

breakdown voltages allow for reliable and stable

operation in extreme mismatched load conditions

unparalleled with older semiconductor technologies.

1200

1400

1600

1800

2000

120

130

120

14.8

15.1

14.8

4.0

4.6

4.9

4.4

4.5

Ordering Information

MAGX-001220-100L00

MAGX-001220-1SB1PPR

100W GaN Power Transistor

Evaluation Board

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications, simu-

lated results, and/or prototype measurements. Commitment to develop is not guaranteed.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

12 3 4 5 6

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与MAGX-001220-1SB1PPR相关器件

型号	品牌	获取价格	描述	数据表
MAGX-002731-030L00	TE	获取价格	GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
MAGX-002731-100L00	TE	获取价格	GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
MAGX-002731-180L00	TE	获取价格	GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty
MAGX-002731-180L0S	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-002731-180L0X	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-002731-SB1PPR	TE	获取价格	GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
MAGX-002731-SB2PPR	TE	获取价格	GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
MAGX-002731-SB3PPR	TE	获取价格	GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty
MAGX-002735-040L00	TE	获取价格	GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
MAGX-002735-SB0PPR	TE	获取价格	GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle

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