生命周期: | Transferred | 零件包装代码: | BGA |
包装说明: | 1 MM PITCH, TBGA-64 | 针数: | 64 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.1.A |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.28 |
最长访问时间: | 120 ns | 其他特性: | SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE |
JESD-30 代码: | R-PBGA-B64 | 长度: | 13 mm |
内存密度: | 67108864 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 64 | 字数: | 4194304 words |
字数代码: | 4000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 4MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE | 并行/串行: | PARALLEL |
编程电压: | 3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | BALL |
端子节距: | 1 mm | 端子位置: | BOTTOM |
类型: | NOR TYPE | 宽度: | 10 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M58LW064A150N1T | STMICROELECTRONICS |
获取价格 |
4MX16 FLASH 3V PROM, 150ns, PDSO56, 14 X 20 MM, PLASTIC, TSOP-56 | |
M58LW064A150NF1T | STMICROELECTRONICS |
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64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories | |
M58LW064A150NF6 | STMICROELECTRONICS |
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暂无描述 | |
M58LW064A150NF6T | STMICROELECTRONICS |
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64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories | |
M58LW064A150NH1T | STMICROELECTRONICS |
获取价格 |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories | |
M58LW064A150NH6T | STMICROELECTRONICS |
获取价格 |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories | |
M58LW064A150T1T | STMICROELECTRONICS |
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64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories | |
M58LW064A150T6T | STMICROELECTRONICS |
获取价格 |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories | |
M58LW064A150ZA1T | STMICROELECTRONICS |
获取价格 |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories | |
M58LW064A150ZA6T | STMICROELECTRONICS |
获取价格 |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories |