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M58LW064A150N1T PDF预览

M58LW064A150N1T

更新时间: 2024-11-13 20:01:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器光电二极管内存集成电路闪存
页数 文件大小 规格书
28页 136K
描述
4MX16 FLASH 3V PROM, 150ns, PDSO56, 14 X 20 MM, PLASTIC, TSOP-56

M58LW064A150N1T 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:TSOP包装说明:14 X 20 MM, PLASTIC, TSOP-56
针数:56Reach Compliance Code:not_compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.4最长访问时间:150 ns
其他特性:SYNCHRONOUS MODE OF OPERATION ALSO POSSIBLE命令用户界面:YES
通用闪存接口:YES数据轮询:NO
JESD-30 代码:R-PDSO-G56JESD-609代码:e0
长度:18.4 mm内存密度:67108864 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:64
端子数量:56字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP56,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
页面大小:4 words并行/串行:PARALLEL
电源:1.8/3.6,3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:1M
最大待机电流:0.000001 A子类别:Flash Memories
最大压摆率:0.05 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:NO
类型:NOR TYPE宽度:14 mm
Base Number Matches:1

M58LW064A150N1T 数据手册

 浏览型号M58LW064A150N1T的Datasheet PDF文件第2页浏览型号M58LW064A150N1T的Datasheet PDF文件第3页浏览型号M58LW064A150N1T的Datasheet PDF文件第4页浏览型号M58LW064A150N1T的Datasheet PDF文件第5页浏览型号M58LW064A150N1T的Datasheet PDF文件第6页浏览型号M58LW064A150N1T的Datasheet PDF文件第7页 
AN1270  
APPLICATION NOTE  
Software Drivers for the M58LW064A Flash Memory  
CONTENTS  
INTRODUCTION  
INTRODUCTION  
This application note provides library source code in C for the  
M58LW064A Multi-Bit Cell Flash Memory. The M58LW064A  
THE M58LW064A  
supports both Asynchronous and Synchronous Burst bus inter-  
faces. The C code drivers work on a layer above the hardware  
and can be used successfully over either bus interface.  
PROGRAMMING MODEL  
WRITING C CODE FOR  
THE M58LW064A  
Listings of the source code can be found at the end of this doc-  
ument. The source code is also available in file form from the  
internet site http://www.st.com or from your STMicroelectronics  
distributor. The c1270_16.c and c1270_16.h files contain librar-  
ies for accessing the M58LW064A Flash Memories.  
C LIBRARY FUNCTIONS  
PROVIDED  
PORTING THE DRIVERS  
TO THE TARGET SYSTEM  
LIMITATIONS OF THE  
Also included in this application note is an overview of the pro-  
gramming model for the M58LW064A. This will familiarize the  
reader with the operation of the memory devices and provide a  
basis for understanding and modifying the accompanying  
source code.  
SOFTWARE  
CONCLUSION  
REVISION HISTORY  
C1270_16.H LISTING  
C1270_16.C LISTING  
The source code is written to be as platform independent as  
possible and requires minimal changes by the user in order to  
compile and run. The application note explains how the user  
should modify the source code for their individual target hard-  
ware. All of the source code is backed up by comments explain-  
ing how it is used and why it has been written as it has.  
This application note does not replace the M58LW064A  
datasheet. It refers to the datasheet throughout and it is neces-  
sary to have a copy in order to follow some of the explanations.  
The software and accompanying documentation has been test-  
ed on a target platform. It is small in size and can be applied to  
any target hardware.  
THE M58LW064A PROGRAMMING MODEL  
The M58LW064A is a 64Mb (4Mb x16) Flash Memory which  
can be electrically erased and programmed through special  
coded command sequences on most standard microprocessor  
buses. The device is broken down into 64 blocks, each 64  
Kwords in size. Each block can be erased individually.  
The M58LW064A is a smart voltage device. It differs from first  
generation dual voltage devices which require a 12V supply to  
program or erase. The M58LW064A is therefore easier to use  
since the hardware does not need to cater for special bus sig-  
nal levels. The voltages needed to erase the device are gener-  
ated by charge pumps inside the device. Two power supply  
September 2001  
1/28  

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