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M24C64-WMW3T PDF预览

M24C64-WMW3T

更新时间: 2024-10-27 15:39:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
19页 149K
描述
8KX8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.200 INCH, PLASTIC, SO-8

M24C64-WMW3T 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.200 INCH, PLASTIC, SO-8针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.63
其他特性:00.1.142最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010DDDRJESD-30 代码:R-PDSO-G8
JESD-609代码:e0长度:5.3 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:8192 words
字数代码:8000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:8KX8输出特性:OPEN-DRAIN
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.3封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/5 V
认证状态:Not Qualified筛选级别:AEC-Q100
座面最大高度:2.03 mm串行总线类型:I2C
子类别:EEPROMs最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:MOS
温度等级:AUTOMOTIVE端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:5.25 mm最长写入周期时间 (tWC):10 ms
写保护:HARDWAREBase Number Matches:1

M24C64-WMW3T 数据手册

 浏览型号M24C64-WMW3T的Datasheet PDF文件第2页浏览型号M24C64-WMW3T的Datasheet PDF文件第3页浏览型号M24C64-WMW3T的Datasheet PDF文件第4页浏览型号M24C64-WMW3T的Datasheet PDF文件第5页浏览型号M24C64-WMW3T的Datasheet PDF文件第6页浏览型号M24C64-WMW3T的Datasheet PDF文件第7页 
M24C64  
M24C32  
64/32 Kbit Serial I²C Bus EEPROM  
2
Compatible with I C Extended Addressing  
2
Two Wire I C Serial Interface  
Supports 400 kHz Protocol  
Single Supply Voltage:  
8
– 4.5V to 5.5V for M24Cxx  
8
– 2.5V to 5.5V for M24Cxx-W  
– 1.8V to 3.6V for M24Cxx-R  
1
1
Hardware Write Control  
PSDIP8 (BN)  
0.25 mm frame  
TSSOP8 (DW)  
169 mil width  
BYTE and PAGE WRITE (up to 32 Bytes)  
RANDOM and SEQUENTIAL READ Modes  
Self-Timed Programming Cycle  
Automatic Address Incrementing  
Enhanced ESD/Latch-Up Behavior  
1 Million Erase/Write Cycles (minimum)  
40 Year Data Retention (minimum)  
8
8
1
1
SO8 (MN)  
SO8 (MW)  
150 mil width  
200 mil width  
DESCRIPTION  
2
These I C-compatible electrically erasable pro-  
grammable memory (EEPROM) devices are orga-  
nized as 8192x8 bits (M24C64) and 4096x8 bits  
(M24C32), and operate down to 2.5 V (for the -W  
version of each device), and down to 1.8 V (for the  
-R version of each device).  
Figure 1. Logic Diagram  
The M24C64 and M24C32 are available in Plastic  
Dual-in-Line, Plastic Small Outline and Thin Shrink  
Small Outline packages.  
V
CC  
3
E0-E2  
SDA  
Table 1. Signal Names  
M24C64  
M24C32  
E0, E1, E2  
SDA  
Chip Enable Inputs  
SCL  
WC  
Serial Data/Address Input/  
Output  
SCL  
WC  
Serial Clock  
Write Control  
Supply Voltage  
Ground  
V
SS  
V
V
CC  
SS  
AI01844B  
December 1999  
1/19  

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