Datasheet > M24L16161A-85BI

M24L16161A-85BI

更新时间： 2024-01-04 19:02:09

品牌	Logo	应用领域
晶豪 - ESMT		动态存储器
页数	文件大小	规格书
15页	212K
描述
DRAM,

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中文翻译

获取价格

技术参数
数据手册

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M24L16161A-85BI 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

M24L16161A-85BI 数据手册

ESMT

Preliminary

M24L16161A

4SRAM

1M x 16 Bit

PSEUDO SRAM

Features

1T SRAM Memory Cell

Data mask function by /LB, /HB

Operating voltage: 2.7V to 3.3V

Access times: 70 / 85 ns (max.)

1Mx16 bit Organization

Common I/O using three-state output

Available in 48-ball 6x8mm Mini-BGA packages

All inputs and outputs are directly TTL-compatible

Wide operating temperature range :

- Standard grade : -25°C to + 85°C

- Industrial grade : -40°C to + 85°C

Ordering Information

48-ball 6x8mm Mini-BGA

Operating

Operating Current Standby Current

Packing Type

Product No.

Voltage

Temperature

Icc1 (max.)

Isb1 ( max.)

M24L16161A – 70B

M24L16161A – 85B

-25°C ~ +85°C

-40°C ~ +85°C

+2.7V ~ +3.3V

25 mA

100 uA

6 x 8 mm Mini-BGA

M24L16161A – 70BI

M24L16161A – 85BI

General Description

The M24L16161A is a low operating current 16,777,216-

bit static random access memory organized as 1,048,576

words by 16 bits and operates on low power voltage from

2.7V to 3.3V. It is built using high performance CMOS

process.

Inputs and three-state outputs are TTL compatible and

allow for direct interfacing with common system bus

structures.

The chip enable input is provided for POWER-DOWN,

device enable. Two byte enable inputs and an output

enable input are included for easy interfacing.

Pin Configurations

Mini-BGA 48-ball Top View

CE2

I/O

I/O¹¹

I/O¹²

I/O¹³

I/O¹⁴

A19

I/O

CE1

I/O¹⁰

GND

VCC

I/O¹⁵

I/O¹⁶

A18

I/O

VCC

GND

A17

DNU

A14

A12

A16

A15

A13

A10

I/O

A11

DNU

Note : DNU pins are to be connected to Vss or left open.

Elite Semiconductor Memory Technology Inc.

Publication Date : Jul. 2003

Revision : 0.2 1/15

12 3 4 5 6 7...15

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