LN66AL

更新时间： 2024-10-19 23:15:15

品牌	Logo	应用领域
松下 - PANASONIC		二极管
页数	文件大小	规格书
4页	77K
描述
GaAs infrared light emitting diode For optical control systems

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Infrared Light Emitting Diodes

LNA2902L (LN66A(L))

GaAs infrared light emitting diode

Unit: mm

φ5.0 0.2

φ6.0 0.2

For optical control systems

ꢀ Features

• High-power output, high-efficiency: I_e= 9 mW/sr (min.)

• Emitted light spectrum is suited for silicon photodetectors

• Good radiant power output linearity with respect to input current

• Wide directivity: θ = 20° (typ.)

2-0.8 max.

2-0.5 0.15

0.5 0.15

• Transparent epoxy resin package

• Long lead-wire type

2.54

ꢀ Absolute Maximum Ratings T_a= 25°C

Parameter

Power dissipation

Symbol

P_D

Rating

160

Unit

Forward current (DC)

Pulse forward current ^*

Reverse voltage (DC)

Operating ambient temperature

Storage temperature

I_F

100

1: Anode

2: Cathode

I_FP

1.5

V_R

T_opr

T_stg

−25 to +85

−40 to +100

°C

Note) : Less than f = 100 Hz, duty cycle = 0.1%

ꢀ Electro-Optical Characteristics T_a= 25°C 3°C

Parameter

Radiant intensity

Symbol

I_e

Conditions

Min

Typ

Max

Unit

mW/sr

I_F= 50 mA

I_F= 100 mA

I_FP= 1.0 A

V_R= 3 V

9.0

Total power output

Peak emission wavelength

Spectral band width

Forward voltage

P_O

12.0

950

λ_P

∆λ

V_F

V_FP

I_R

1.4

1.6

3.0

Pulse forward voltage ^*

Reverse current

µA

Total capacitance between terminals

Beal angle at 50% axial intensity

C_t

V_R= 0 V, f = 1 MHz

The angle when the beam intensity is

halved.

Cut-off frequency ^*

f_C

MHz

Note) 1: Less than f = 100 Hz, duty cycle = 0.1%

2: Cut-off frequency

P_Oat f = f_C

P_Oat f = 50 kHz

f_C: 10 × log

= −3

Note) The part number in the parenthesis shows conventional part number.

Publication date: October 2001

SHC00039AED

12 3 4

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