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LN66ANC PDF预览

LN66ANC

更新时间: 2024-10-20 13:09:27
品牌 Logo 应用领域
松下 - PANASONIC 二极管
页数 文件大小 规格书
3页 50K
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LN66ANC 数据手册

 浏览型号LN66ANC的Datasheet PDF文件第2页浏览型号LN66ANC的Datasheet PDF文件第3页 
Infrared Light Emitting Diodes  
LN66  
GaAs Infrared Light Emitting Diode  
Unit : mm  
ø5.0±0.2  
For optical control systems  
Features  
High-power output, high-efficiency : PO = 8 mW (typ.)  
Emitted light spectrum suited for silicon photodetectors  
Good radiant power output linearity with respect to input current  
Wide directivity : θ = 25 deg. (typ.)  
2-1.0±0.15  
2-0.6±0.15  
Transparent epoxy resin package  
2.54  
Absolute Maximum Ratings (Ta = 25˚C)  
2
1
Parameter  
Symbol  
Ratings  
Unit  
mW  
mA  
A
1: Cathode  
2: Anode  
Power dissipation  
PD  
IF  
160  
100  
Forward current (DC)  
Pulse forward current  
Reverse voltage (DC)  
Operating ambient temperature  
Storage temperature  
*
IFP  
1.5  
VR  
Topr  
Tstg  
3
V
–25 to +85  
– 40 to +100  
˚C  
˚C  
*
f = 100 Hz, Duty cycle = 0.1 %  
Electro-Optical Characteristics (Ta = 25˚C)  
Parameter  
Radiant power  
Symbol  
Conditions  
min  
typ  
8
max  
Unit  
mW  
nm  
nm  
V
*
PO  
IF = 50mA  
5
Peak emission wavelength  
Spectral half band width  
Forward voltage (DC)  
Reverse current (DC)  
Capacitance between pins  
Half-power angle  
λP  
∆λ  
VF  
IR  
IF = 50mA  
950  
50  
IF = 50mA  
IF = 100mA  
1.3  
1.6  
10  
VR = 3V  
µA  
pF  
Ct  
θ
VR = 0V, f = 1MHz  
The angle in which radiant intencity is 50%  
35  
25  
deg.  
* PO Classifications  
Class  
R
S
PO (mW)  
5 to 8  
>7  
1

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