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LN66AS

更新时间: 2024-10-20 19:50:51
品牌 Logo 应用领域
松下 - PANASONIC 光电
页数 文件大小 规格书
5页 361K
描述
Infrared LED, 5mm, 1-Element, 950nm, PLASTIC, LT5RR102-001, 2 PIN

LN66AS 技术参数

生命周期:Obsolete包装说明:PLASTIC, LT5RR102-001, 2 PIN
Reach Compliance Code:unknownHTS代码:8541.40.20.00
风险等级:5.65配置:SINGLE
最大正向电流:0.1 A功能数量:1
最高工作温度:85 °C最低工作温度:-25 °C
光电设备类型:INFRARED LED标称输出功率:12 mW
峰值波长:950 nm形状:ROUND
尺寸:5 mmBase Number Matches:1

LN66AS 数据手册

 浏览型号LN66AS的Datasheet PDF文件第2页浏览型号LN66AS的Datasheet PDF文件第3页浏览型号LN66AS的Datasheet PDF文件第4页浏览型号LN66AS的Datasheet PDF文件第5页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Infrared Light Emitting Diodes  
LNA2903L (LN66A)  
GaAs Infrared Light Emitting Diode  
For remote control systems  
Features  
High-power output, high-efciency: Ie = 9 mW/sr (min.)  
Emitted light spectrum suited for silicon photodetectors  
Good radiant power output linearity with respect to input current  
Wide directivity: θ = 20° (typ.)  
Transparent epoxy resin package  
Absolute Maximum Ratings T = 25°C  
a
Parameter  
Power dissipation  
Symbol  
PD  
Rating  
160  
Unit  
mW  
mA  
A
Forward current  
IF  
100  
Pulse forward current *  
Reverse voltage  
IFP  
1.5  
VR  
3
V
Operating ambient temperature  
Storage temperature  
Topr  
–25 to +85  
–40 to +100  
°C  
T
stg  
°C  
Note) : f = 100 Hz, Duty cycle = 0.1%  
*
Electrical-Optical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
PO  
Conditions  
Min  
Typ  
Max  
Unit  
mW  
µA  
Radiant power  
IF = 50 mA  
VR = 3 V  
12.0  
Reverse current  
IR  
10  
1.6  
3.0  
Forward voltage  
VF  
VFP  
Ie  
IF = 100 mA  
IFP = 1.0A  
IF = 50 mA  
1.4  
V
V
1
Pulse forward voltage *  
2
Center radiant intensity *  
9.0  
mW/sr  
pF  
Terminal capacitance  
Ct  
VR = 0 V, f = 1 MHz  
IF = 50 mA  
35  
950  
50  
Peak emission wavelength  
Spectral half band width  
Half-power angle  
nm  
nm  
°
λP  
Δλ  
θ
IF = 50 mA  
The angle when the radiant power is halved.  
20  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. Cutoff frequency: 1 MHz  
PO at f = fC  
fC : 10 × log  
= 3  
PO at f = 50 kHz  
3. 1: f = 100 Hz, Duty cycle = 0.1%  
*
2: Rank classication  
*
Rank  
No-rank  
S
Ie (mW/sr)  
9.0 ≤  
11.0 ≤  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: October 2008  
SHC00032CED  
1

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