Datasheet > LN78

LN78

更新时间： 2024-10-19 22:31:11

品牌	Logo	应用领域
松下 - PANASONIC		二极管
页数	文件大小	规格书
2页	38K
描述
GaAlAs Infrared Light Emitting Diode

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中文翻译

获取价格

数据手册

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LN78 数据手册

Infrared Light Emitting Diodes

LN78

GaAlAs Infrared Light Emitting Diode

Unit : mm

2.9±0.25

For optical control cystems

4.5±0.3

1.2

0.9

1.7±0.2

ø2.4

0.8

Features

High-power output, high-efficiency : P_O= 10 mW (typ.)

High-speed modulation capability : f_C= 12 MHz

2-1.2±0.3

2-0.45±0.15

0.45±0.15

2.54

R1.2

R0.6

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

Ratings

Unit

1: Cathode

2: Anode

Power dissipation

P_D

180

Forward current (DC)

Pulse forward current

Reverse voltage (DC)

Operating ambient temperature

Storage temperature

I_F

100

I_FP

V_R

T_opr

T_stg

–25 to+85

–30 to +100

˚C

f = 100 Hz, Duty cycle = 0.1 %

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Radiant power

Symbol

Conditions

min

typ

max

Unit

P_O

λ_P

∆λ

V_F

I_R

I_F= 50mA

880

Peak emission wavelength

Spectral half band width

Forward voltage (DC)

Reverse current (DC)

Capacitance between pins

Half-power angle

I_F= 50mA

I_F= 100mA

1.5

1.8

V_R= 3V

µA

C_t

V_R= 0V, f = 1MHz

The angle in which radiant intencity is 50%

I_FP= 50mA + 10mA_p-p

deg.

MHz

Cutoff frequency

f_C

P_O(f_CMHz)

P_O(1MHz)

^*Frequency when modulation optical power decreases by 3dB from 1MHz.

10 log

(

= – 3

)

中文翻译

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