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LMC660AINEP PDF预览

LMC660AINEP

更新时间: 2024-11-24 13:09:23
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美国国家半导体 - NSC 运算放大器
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14页 464K
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LMC660AINEP 数据手册

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April 1998  
LMC660  
CMOS Quad Operational Amplifier  
n Ultra low input bias current: 2 fA  
n Input common-mode range includes V−  
General Description  
The LMC660 CMOS Quad operational amplifier is ideal for  
operation from a single supply. It operates from +5V to +15V  
and features rail-to-rail output swing in addition to an input  
common-mode range that includes ground. Performance  
limitations that have plagued CMOS amplifiers in the past  
are not a problem with this design. Input VOS, drift, and  
broadband noise as well as voltage gain into realistic loads  
(2 kand 600) are all equal to or better than widely ac-  
cepted bipolar equivalents.  
n Operating range from +5V to +15V supply  
+
=
n ISS 375 µA/amplifier; independent of V  
n Low distortion: 0.01% at 10 kHz  
n Slew rate: 1.1 V/µs  
n Available in extended temperature range (−40˚C to  
+125˚C); ideal for automotive applications  
n Available to Standard Military Drawing specification  
This chip is built with National’s advanced Double-Poly  
Silicon-Gate CMOS process.  
Applications  
n High-impedance buffer or preamplifier  
n Precision current-to-voltage converter  
n Long-term integrator  
See the LMC662 datasheet for a dual CMOS operational  
amplifier with these same features.  
n Sample-and-Hold circuit  
n Peak detector  
n Medical instrumentation  
n Industrial controls  
Features  
n Rail-to-rail output swing  
n Specified for 2 kand 600loads  
n High voltage gain: 126 dB  
n Low input offset voltage: 3 mV  
n Low offset voltage drift: 1.3 µV/˚C  
n Automotive sensors  
Connection Diagram  
14-Pin DIP/SO  
DS008767-1  
© 1999 National Semiconductor Corporation  
DS008767  
www.national.com  

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