SEMICONDUCTOR
KTC4521F
TRIPLE DIFFUSED NPN TRANSISTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
A
C
DIM MILLIMETERS
S
FEATURES
_
10.0+0.3
A
_
15.0+0.3
B
C
E
Excellent Switching Times.
_
2.70 0.3
+
D
E
F
0.76+0.09/-0.05
_
: ton=0.5 S(Max.), tf=0.3 S(Max.), at IC=4A.
High Collector Voltage : VCEO=500V.
Φ3.2 0.2
+
_
3.0+0.3
_
12.0 0.3
+
G
H
0.5+0.1/-0.05
_
13.6 0.5
+
J
K
L
L
R
_
3.7 0.2
+
L
1.2+0.25/-0.1
1.5+0.25/-0.1
M
M
N
P
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
D
D
_
2.54+0.1
_
6.8 0.1
+
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
_
+
4.5 0.2
Q
R
_
2.6+0.2
N
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
800
N
H
S
0.5 Typ
500
V
7
V
1. BASE
3
2
1
2. COLLECTOR
3. EMITTER
DC
5
Collector Current
A
ICP
Pulse
10
2
IB
Base Current
A
TO-220IS
PC
40
W
Collector Power Dissipation (Tc=25
Junction Temperature
)
Tj
150
Tstg
Storage Temperature Range
-55 150
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP. MAX. UNIT
VCB=500V, IE=0
VEB=5V, IC=0
-
-
-
-
10
10
-
A
A
IEBO
Emitter Cut-off Current
VCEX(SUS)
VCE(sat)
VBE(sat)
IC=2.5A, IB1=-IB2=1A L=1mH, Clamped
IC=3A, IB=0.6A
Collector-Emitter Sustaning Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
500
-
-
V
-
1
V
V
IC=3A, IB=0.6A
-
-
1.5
50
-
hFE (1) (Note) VCE=5V, IC=0.6A
15
8
-
DC Current Gain
hFE (2)
Cob
VCE=5V, IC=3A
-
VCB=10V, IE=0, f=1MHz
VCE=10V, IC=0.6A
Collector Output Capacitance
Transition Frequency
-
80
18
-
pF
fT
-
-
MHz
OUTPUT
ton
tstg
tf
Turn On Time
-
-
-
-
-
-
0.5
3
20µS
I
I
B1
INPUT
B2
Switching
Storage Time
Time
I
B1
I
S
B2
I
=0.8A , I =-1.6A
B2
B1
Fall Time
0.3
V
=200V
CC
<
DUTY CYCLE 1%
=
Note : hFE (1) Classification R:15 30, O:20 40, Y:30 50
2007. 5. 22
Revision No : 0
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