Datasheet > KTC4520F_10

KTC4520F_10

更新时间： 2024-02-09 21:42:58

品牌	Logo	应用领域
KEC		晶体晶体管
页数	文件大小	规格书
3页	85K
描述
TRIPLE DIFFUSED NPN TRANSISTOR

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中文翻译

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数据手册

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KTC4520F_10 数据手册

SEMICONDUCTOR

KTC4520F

TRIPLE DIFFUSED NPN TRANSISTOR

TECHNICAL DATA

SWITCHING REGULATOR APPLICATION.

HIGH VOLTAGE SWITCHING APPLICATION.

DIM MILLIMETERS

FEATURES

10.0+0.3

15.0+0.3

· Excellent Switching Times.

: t_on=0.5μS(Max.), t_f=0.3μS(Max.), at I_C=2A.

· High Collector Voltage : V_CEO=500V.

2.70 0.3

0.76+0.09/-0.05

Φ3.2 0.2

3.0+0.3

12.0 0.3

0.5+0.1/-0.05

13.6 0.5

3.7 0.2

1.2+0.25/-0.1

1.5+0.25/-0.1

MAXIMUM RATING (Ta=25℃)

2.54+0.1

6.8 0.1

CHARACTERISTIC

Collector-Base Voltage

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

4.5 0.2

2.6+0.2

800

0.5 Typ

Collector-Emitter Voltage

Emitter-Base Voltage

500

1. BASE

2. COLLECTOR

3. EMITTER

Collector Current

Base Current

I_CP

Pulse

I_B

TO-220IS

P_C

℃

Collector Power Dissipation (Tc=25℃)

Junction Temperature

T_j

150

T_stg

Storage Temperature Range

-55∼ 150

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP. MAX. UNIT

V_CB=500V, I_E=0

V_EB=5V, I_C=0

μA

I_EBO

Emitter Cut-off Current

V_CEX(SUS)

V_CE(sat)

V_BE(sat)

I_C=1.5A, I_B1=-I_B2=0.6A L=2mH, Clamped

I_C=1.5A, I_B=0.3A

Collector-Emitter Sustaning Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

500

I_C=1.5A, I_B=0.3A

1.5

h_FE(1) (Note) V_CE=5V, I_C=0.3A

DC Current Gain

h_FE(2)

C_ob

V_CE=5V, I_C=1.5A

V_CB=10V, I_E=0, f=1MHz

V_CE=10V, I_C=0.3A

Collector Output Capacitance

Transition Frequency

f_T

MHz

t_on

t_stg

t_f

Turn On Time

0.5

Switching

Storage Time

Time

μS

Fall Time

0.3

Note : h_FE(1) Classification R:15∼ 30, O:20∼ 40, Y:30∼ 50

2010. 6. 17

Revision No : 1

1/3

12 3

中文翻译

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