Datasheet > KTC3205-Y

KTC3205-Y

更新时间： 2024-09-11 01:12:47

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描述
NPN Silicon General Purpose Transistor

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中文翻译

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技术参数
数据手册

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KTC3205-Y 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.7	Base Number Matches：	1

KTC3205-Y 数据手册

KTC3205

NPN Silicon

General Purpose Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-92L

FEATURE

ꢀ

Low collector to emitter saturation voltage V_CE(sat)

Audio power amplifier

High Current

ꢀ

1Emitter

2Collector

3Base

CLASSIFICATION OF h_FE

Millimeter

REF.

Min.

4.70

7.80

13.80

3.70

0.35

Max.

5.10

8.20

14.20

4.10

0.55

0.45

Product-Rank

KTC3205-O

KTC3205-Y

160~320

Range

100~200

1.27 TYP.

1.28

2.44

0.60

1.58

2.64

0.80

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Continuous Collector Current

Collector Power Dissipation

Junction, Storage Temperature

P_C

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

I_C=1mA, I_E=0

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut - Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=10mA, I_B=0

I_E=1mA, I_C=0

0.1

320

µA V_CB=30V, I_E=0

µA V_EB=5V, I_C=0

V_CE=2V, I_C=500mA

Emitter cut-off current

I_EBO

DC Current Gain

h_FE

100

Collector to Emitter Saturation Voltage

Base – Emitter Voltage

V_CE(sat)

V_BE

I_C=1.5A, I_B=30mA

V_CE=2V, I_C=500mA

Transition Frequency

f_T

120

MHz V_CE=2V, I_C=500mA

pF V_CB=10V, I_E=0, f=1MHz

Collector Output Capacitance

C_ob

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

15-Nov-2012 Rev. A

Page 1 of 1

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