Datasheet > KTC3206_07

KTC3206_07

更新时间： 2024-09-10 11:32:15

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
3页	807K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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中文翻译

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数据手册

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KTC3206_07 数据手册

SEMICONDUCTOR

KTC3206

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

BLACK AND WHITE TV VIDEO OUTPUT APLICATION.

HIGH VOLTAGE SWITCHING APPLICATION.

FEATURES

High Breakdown Voltage : V_CEO=150V(Min.).

Low Output Capacitance : C_ob=5.0pF(Max.).

High Transition Frequency : f_T=120MHz(Typ.).

DIM MILLIMETERS

DEPTH:0.2

7.20 MAX

5.20 MAX

0.60 MAX

2.50 MAX

1.15 MAX

1.27

1.70 MAX

0.55 MAX

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

14.00+0.50

0.35 MIN

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

0.75+0.10

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

200

150

1.25

Φ1.50

0.10 MAX

12.50+0.50

1. EMITTER

2. COLLECTOR

3. BASE

1.00

-50

I_E

Emitter Current

I_B

Base Current

TO-92L

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

-55 150

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

0.1

240

0.5

1.0

UNIT

V_CB=200V, I_E=0

I_EBO

V_EB=5V, I_C=0

Emitter Cut-off Current

h_FE(Note)

V_CE(sat)

V_BE(sat)

f_T

V_CE=5V, I_C=10mA

I_C=10mA, I_B=1mA

V_CE=30V, I_C=10mA

V_CB=10V, I_E=0, f=1MHz

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

120

3.5

MHz

C_ob

Collector Output Capacitance

5.0

Note : h_FEClassification 0:70 140, Y:120 240

2007. 3. 28

Revision No : 1

1/3

12 3

中文翻译

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