Datasheet > KTC3209_05

KTC3209_05

更新时间： 2024-11-21 11:32:15

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
3页	901K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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中文翻译

获取价格

数据手册

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KTC3209_05 数据手册

SEMICONDUCTOR

KTC3209

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

POWER AMPLIFIER APPLICATIONS.

POWER SWITCHING APPLICATIONS.

FEATURES

Low Collector Saturation Voltage

: V_CE(sat)=0.5V(Max.) (I_C=1A)

High Speed Switching Time : t_stg=1.0 S(Typ.)

Complementary to KTA1281.

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

I_E

Emitter Current

-2

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

-55 150

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_CB=50V, I_E=0

0.1

I_EBO

V_EB=5V, I_C=0

I_C=10mA, I_B=0

I_E=100mA, I_B=0

Emitter Cut-off Current

V_(BR)CEO

V_(BR)EBO

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

h_FE(1) (Note) V_CE=2V, I_C=0.5A (Note)

h_FE(2) (Note) V_CE=2V, I_C=1.5A

240

DC Current Gain

V_CE(sat)

V_BE(sat)

f_T

I_C=1A, I_B=0.05A

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

0.5

1.2

I_C=1A, I_B=0.05A

V_CE=2V, I_C=0.5A

V_CB=10V, I_E=0, f=1MHz

100

MHz

C_ob

Collector Output Capacitance

t_on

t_stg

t_f

Turn-on Time

0.1

1.0

0.1

Switching

Storage Time

Time

Fall Time

Note : h_FEClassification 0:70 140, Y:120 240

2005. 12. 2

Revision No : 1

1/3

12 3

中文翻译

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