5秒后页面跳转
KTC3265 PDF预览

KTC3265

更新时间: 2024-01-13 03:42:34
品牌 Logo 应用领域
SECOS 晶体晶体管开关光电二极管
页数 文件大小 规格书
2页 225K
描述
0.8A , 35V NPN Plastic Encapsulated Transistor

KTC3265 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.69
Base Number Matches:1

KTC3265 数据手册

 浏览型号KTC3265的Datasheet PDF文件第2页 
KTC3265  
0.8A , 35V  
NPN Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-23  
FEATURE  
A
High DC current gain  
Complementary to KTA1298  
L
3
3
Top View  
C B  
1
1
2
2
K
F
E
CLASSIFICATION OF hFE  
D
Product-Rank  
KTC3265-O  
KTC3265-Y  
160~320  
EY  
H
J
G
Range  
100~200  
EO  
Marking Code  
Millimeter  
Millimeter  
Min. Max.  
REF.  
REF.  
Min.  
Max.  
3.04  
2.55  
1.40  
1.15  
2.04  
0.50  
A
B
C
D
E
F
2.80  
2.10  
1.20  
0.89  
1.78  
0.30  
G
H
J
K
L
0.09  
0.45  
0.08  
0.18  
0.60  
0.177  
PACKAGE INFORMATION  
0.6 REF.  
0.89  
1.02  
Package  
MPQ  
Leader Size  
SOT-23  
3K  
7 inch  
Collector  
3
1
Base  
2
Emitter  
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
Ratings  
Unit  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
35  
V
V
30  
5
800  
V
Collector Current - Continuous  
Collector Power Dissipation  
Junction, Storage Temperature  
mA  
mW  
°C  
PC  
200  
TJ, TSTG  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
Min.  
Typ. Max.  
Unit  
Test Conditions  
IC=100µA, IE=0  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cut-Off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
35  
-
-
-
V
V
30  
-
IC=10mA, IB=0  
5
-
-
V
IE=100µA, IC=0  
VCB=30V, IE=0  
-
-
0.1  
0.1  
320  
0.5  
0.8  
-
µA  
µA  
Emitter Cut-Off Current  
IEBO  
-
100  
-
-
-
VEB=5V, IC=0  
DC Current Gain  
hFE  
VCE=1V, IC=100mA  
IC=500mA, IB=20mA  
IC=10mA, VCE=1V  
Collector to Emitter Saturation Voltage  
Base to Emitter Saturation Voltage  
Transition Frequency  
VCE(sat)  
VBE  
-
V
V
0.5  
-
-
fT  
120  
13  
MHz VCE=5V, IC=10mA, f=100MHz  
pF CB=10V, I =0, f=1MH  
Collector output capacitance  
Cob  
-
-
V
E
Z
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
15-Jul-2011 Rev. A  
Page 1 of 2  

KTC3265 替代型号

型号 品牌 替代类型 描述 数据表
KTC3265 KEC

功能相似

EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER,POWER SWITCHING)

与KTC3265相关器件

型号 品牌 获取价格 描述 数据表
KTC3265_15 KEXIN

获取价格

NPN Transistors
KTC3265-3_15 KEXIN

获取价格

NPN Transistors
KTC3265-O KEXIN

获取价格

NPN Transistors
KTC3265-Y KEXIN

获取价格

NPN Transistors
KTC3266 KEC

获取价格

EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)
KTC3295 KEC

获取价格

EPITAXIAL PLANAR NPN TRANSISTOR (LOW NOISE AMPLIFIER)
KTC3295_02 KEC

获取价格

EPITAXIAL PLANAR NPN TRANSISTOR
KTC3400 KEC

获取价格

EPITAXIAL PLANAR NPN TRANSISTOR (DIFFERENTIAL AMP.)
KTC3420S KEC

获取价格

2SC3229
KTC3423 KEC

获取价格

TRIPLE DIFFUSED PNP TRANSISTOR(AUDIO FREQUENCY AMPLIFIER)