Datasheet > KTC3209-Y

KTC3209-Y

更新时间： 2024-11-22 01:12:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1443K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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KTC3209-Y 数据手册

DIP Type

Transistors

NPN Transistors

KTC3209

TO-92L

Unit:mm

4.9 ± 0.2

0.7 ±0.1

■ Features

● Low Saturation Voltage

● High Speed Switching Time

● Complementary to KTA1281

0.45 ±0.1

1.27

2.54 ±0.1

1.60 ^(max)

Emitter

2.Collector

3.Base

4.0(min)

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 1 mA， I

Ic= 10 mA，I

= 1 mA， I

CB= 50V , I

EB= 5V , I =0

E= 0

B=0

C= 0

CBO

EBO

E= 0

0.1

0.5

1.2

240

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=1 A, I

=50mA

=1 A, I

CE= 2V, I

=500mA

=1.5 A

DC current gain

hFE

Turn On Time

Storage Time

Fall Time

0.1

stg

0.1

Collector output capacitance

Transition frequency

CB= 10V, I

= 0,f=1MHz

CE= 2V, I = 500mA

100

MHz

■ Classification of hfe(1)

Type

KTC3209-O

KTC3209-Y

120-240

Range

70-140

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