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KTC3227 PDF预览

KTC3227

更新时间: 2024-11-21 12:06:03
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 123K
描述
TRANSISTOR (NPN)

KTC3227 数据手册

  
RoHS  
KTC3227  
TO-92L  
1. EMITTER  
2. COLLECTOR  
3. BASE  
KTC3227 TRANSISTOR (NPN)  
FEATURES  
Power dissipation  
PCM:  
1
W (Tamb=25)  
Collector current  
ICM:  
400  
80  
mA  
V
Collector-base voltage  
V(BR)CBO  
:
1 2 3  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic= 1mA, IE=0  
MIN  
80  
80  
5
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= 5 mA , IB=0  
V
IE= 1 mA, IC=0  
V
VCB=50V, IE=0  
0.1  
0.1  
240  
µA  
µA  
IEBO  
VEB=5V, IC=0  
Emitter cut-off current  
hFE(1)  
VCE= 2V, IC= 50mA  
VCE= 2V, IC= 200mA  
IC= 200mA, IB= 20mA  
VCE= 2V, IC= 5mA  
70  
40  
DC current gain  
hFE(2)  
VCE(sat)  
VBE  
0.4  
0.8  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
0.55  
V
CE= 10V, IC= 10mA  
80  
10  
MHz  
pF  
Transition frequency  
fT  
VCB=10V, IE=0, f=1MHZ  
Collector Output Capacitance  
Cob  
WEJ ELECTRONIC CO.,LTD  
CLASSIFICATION OF hFE  
Rank  
O
Y
70-140  
120-240  
Range  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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