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KTA2014 PDF预览

KTA2014

更新时间: 2024-11-20 11:32:15
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体晶体管开关光电二极管
页数 文件大小 规格书
3页 685K
描述
TRANSISTOR (PNP)

KTA2014 数据手册

 浏览型号KTA2014的Datasheet PDF文件第2页浏览型号KTA2014的Datasheet PDF文件第3页 
KTA2014  
TRANSISTOR (PNP)  
SOT-323  
FEATURES  
z
Low frequency power amplifier application  
Power switching application  
1. BASE  
2. EMITTER  
3. COLLECTOR  
z
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
-50  
-50  
Units  
V
V
V
mA  
mW  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current –Continuous  
Collector Power Dissipation  
Junction Temperature  
-5  
150  
100  
150  
PC*  
TJ  
Tstg  
Storage Temperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
MIN  
TYP  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC=- 0.1mA, IE=0  
IC= -1mA, IB=0  
IE=-0.1mA, IC=0  
VCB=-50V, IE=0  
VEB= -5V, IC=0  
-50  
-50  
-5  
V
V
V
-0.1  
-0.1  
400  
-0.3  
μA  
μA  
IEBO  
DC current gain  
hFE  
VCE=-6V,IC=-2mA  
70  
80  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
IC=-100mA, IB= -10mA  
VCE=-10V, IC=-1mA,  
V
MHz  
pF  
VCB=-10V, IE=0  
f=1MHz  
Collector output capacitance  
Cob  
7
VCE=-6V, IC=-0.1mA  
f=1KHz,Rg=10KΩ  
Noise Figure  
NF  
10  
dB  
CLASSIFICATION OF hFE  
Rank  
O(2)  
Y(4)  
120-240  
SY  
GR(6)  
Range  
70-140  
SO  
200-400  
SG  
MARKING  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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